{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC119N03MSCG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC119N03MSCG","canonicalUrl":"https://icboms.com/infineon/BSC119N03MSCG","factsUrl":"https://icboms.com/api/mcp/products/BSC119N03MSCG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™3 N-Channel MOSFET, 30 V drain-source, 11.9 mOhm Rds(on) at 10 V, 39 A continuous drain (Tc), PG-TDSON-8 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 30 V N-channel power MOSFET for low-voltage switching The Infineon BSC119N03MSCG is a 30 V N-channel power MOSFET from the OptiMOS™3 series, built on a metal-oxide trench technology. It delivers a maximum continuous drain current of 39 A at the case (Tc) and 11 A at ambient (Ta), with a typical on-resistance of 11.9 mOhm at 10 V gate drive and 30 A. The PG-TDSON-8 package (8-PowerTDFN) includes an exposed pad for thermal management, supporting up to 28 W power dissipation at the case. Input capacitance (Ciss) is 1500 pF at 15 V drain-source, giving a moderate gate-drive load that a standard gate-driver IC can handle without excessive peak current. The threshold voltage (Vgs(th)) maximum is 2 V at 250 µA, ensuring the device turns on cleanly with logic-level gate signals. For volume production or urgent BOM fills, submit an RFQ to verify lead time and stock position.","metaTitle":"Infineon BSC119N03MSCG N-Channel MOSFET, 30V, 11.9mOhm","metaDescription":"Infineon OptiMOS™3 N-channel MOSFET, 30V Vdss, 11.9mOhm Rds(on) at 10V, 39A continuous drain. PG-TDSON-8 package.","metaKeywords":null},"attributes":{"series":"OptiMOS™3","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"11.9mOhm @ 30A, 10V","Power Dissipation (Max)":"2.5W (Ta), 28W (Tc)","Supplier Device Package":"PG-TDSON-8","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1500 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"11A (Ta), 39A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.25","priceTiers":[{"qty":1185,"price":"$0.25000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/68b519adeec2047cbdf493c4a56c8aca.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC119N03MSCG/alternatives.json"},"ai":{"faq":[{"question":"Does BSC119N03MSCG have a drop-in replacement?","answer":"No direct drop-in replacement is listed in the official records. The IPD50R950CEAUMA1 is a different voltage class (500 V) and much higher Rds(on) (950 mOhm), so it is not a functional substitute for this 30 V low-Rds(on) MOSFET."},{"question":"Where can I buy BSC119N03MSCG with immediate stock?","answer":"This part is sourced to order through independent distribution. Submit an RFQ for current availability and pricing — stock and lead time are confirmed at quote time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC119N03MSCG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC119N03MSCG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}