{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC0924NDIATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC0924NDIATMA1","canonicalUrl":"https://icboms.com/infineon/BSC0924NDIATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC0924NDIATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ BSC0924NDIATMA1, dual N-channel asymmetrical MOSFET, 30V Vdss, 17A / 32A continuous drain, 5mOhm Rds(on) at 10V, logic-level gate, PG-TISON-8 package.","salesMarkdown":"## Active production — logic-level dual MOSFET for compact power stages The Infineon BSC0924NDIATMA1 is an OptiMOS™ dual N-channel asymmetrical MOSFET in a PG-TISON-8 package, rated for 30 V drain-source and a continuous drain current of 17 A on one channel and 32 A on the other. ## 5 mOhm Rds(on) at 10 V — and a logic-level gate that switches from 4.5 V The on-resistance is 5 mOhm maximum at 20 A drain current with 10 V gate drive, which is the benchmark for a 30 V dual MOSFET in this package class. Gate charge at 4.5 V is 10 nC maximum. ## Asymmetrical channels — one pair, two current ratings The 17 A / 32 A split tells you this is not a matched dual MOSFET. It is designed for a specific topology — typically a synchronous buck converter where the high-side switch sees lower average current than the low-side synchronous rectifier, or a load-switch pair where one channel handles the main rail and the other a lighter auxiliary rail. The total power dissipation is rated at 1 W maximum, which means the thermal management — the PCB copper area under the exposed pad of the PG-TISON-8 package — sets the real-world current limit, not the silicon alone. ## PG-TISON-8 — what the layout engineer needs The 8-PowerTDFN package (Infineon calls it PG-TISON-8) is a surface-mount, thermally enhanced package with an exposed die pad. The input capacitance is 1160 pF at 15 V drain-source, which is moderate — the gate drive does not need a pre-driver, but the layout should keep the gate-drive loop tight to avoid ringing. The operating junction temperature range is -55°C to 150°C, so it is suitable for industrial and automotive environments where the PCB sees wide thermal cycling.","metaTitle":"Infineon BSC0924NDIATMA1 OptiMOS™ Dual N-Ch MOSFET, 30V","metaDescription":"Infineon BSC0924NDIATMA1 OptiMOS™ dual N-channel MOSFET. 30V Vdss, 5mOhm Rds(on) at 10V, logic-level gate. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"MOSFET (Metal Oxide)","FET Feature":"Logic Level Gate, 4.5V Drive","Power - Max":"1W","Configuration":"2 N-Channel (Dual) Asymmetrical","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"5mOhm @ 20A, 10V","Supplier Device Package":"PG-TISON-8","Gate Charge (Qg) (Max) @ Vgs":"10nC @ 4.5V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"1160pF @ 15V","Current - Continuous Drain (Id) @ 25°C":"17A, 32A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.48","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.48000","currency":"USD"},{"qty":10,"price":"$1.32000","currency":"USD"},{"qty":100,"price":"$1.02940","currency":"USD"},{"qty":500,"price":"$0.85040","currency":"USD"},{"qty":1000,"price":"$0.67137","currency":"USD"},{"qty":2000,"price":"$0.62661","currency":"USD"},{"qty":5000,"price":"$0.59528","currency":"USD"},{"qty":10000,"price":"$0.58380","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8610e926894c14c5039e93e0b74b89db.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSC0924NDIATMA1 at 4.5V Vgs?","answer":"The Rds(on) is specified at 5 mOhm maximum at 20 A drain current with 10 V gate drive. The part is characterised for 4.5 V logic-level drive, but the Rds(on) at 4.5 V will be higher than the 10 V figure — the datasheet curve shows the typical increase. For a precise number at your operating point, check the typical Rds(on) vs Vgs curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC0924NDIATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC0924NDIATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}