{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC090N03MSGXT","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC090N03MSGXT","canonicalUrl":"https://icboms.com/infineon/BSC090N03MSGXT","factsUrl":"https://icboms.com/api/mcp/products/BSC090N03MSGXT","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 3 BSC090N03MSGXT, N-Channel Power MOSFET, 30 V Vdss, 9 mOhm Rds(on) @ 30 A, 10 V, 48 A continuous drain (Tc), PG-TDSON-8-5 package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BSC090N03MSGXT is an N-channel power MOSFET from the OptiMOS™ 3 family, rated for 30 V drain-to-source voltage and 9 mOhm typical on-resistance at 30 A with a 10 V gate drive. The 2.5 W at ambient (Ta) vs 32 W at case (Tc) derating tells you the board copper and via array under the pad are what carry the heat — plan for a thermal via cluster under the source pad if you intend to run near the 48 A continuous drain rating at elevated ambient.","metaTitle":"Infineon BSC090N03MSGXT N-Channel MOSFET, 30 V, 9 mOhm","metaDescription":"Infineon OptiMOS™ 3 N-Channel MOSFET, 30 V Vdss, 9 mOhm Rds(on) at 30 A. Active lifecycle. PG-TDSON-8-5 package.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 3","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™ 3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9mOhm @ 30A, 10V","Power Dissipation (Max)":"2.5W (Ta), 32W (Tc)","Supplier Device Package":"PG-TDSON-8-5","Gate Charge (Qg) (Max) @ Vgs":"24 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"12A (Ta), 48A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.24","priceTiers":[{"qty":1250,"price":"$0.24000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6a3a9dfd3aa3afca0900a257f9475d2a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC090N03MSGXT/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSC090N03MSGXT?","answer":"The Rds(on) is 9 mOhm maximum at 30 A drain current with a 10 V gate drive. At 4.5 V gate drive the on-resistance is higher — the datasheet curve should be checked for the exact value at your operating point."},{"question":"What is the closest pin-compatible alternative to BSC090N03MSGXT in this component family?","answer":"Within the OptiMOS™ 3 family, parts in the same PG-TDSON-8-5 footprint with similar 30 V Vdss ratings exist, but the exact Rds(on) and gate charge trade-offs differ. No official second-source alternate is listed in the record. For a pin-compatible drop-in, review the Infineon OptiMOS™ 3 selection guide for devices sharing the PG-TDSON-8-5 package and 30 V rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC090N03MSGXT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC090N03MSGXT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}