{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC0901NSIATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC0901NSIATMA1","canonicalUrl":"https://icboms.com/infineon/BSC0901NSIATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC0901NSIATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 30 V Vdss, 28 A (Ta) / 100 A (Tc) continuous drain, 2 mOhm max Rds(on) at 10 V, PG-TDSON-8-6 package, -55°C to 150°C junction temperature.","salesMarkdown":"## Rds(on) and gate drive — sizing the gate driver and thermal budget The drive voltage spec (4.5 V min, 10 V for rated Rds(on)) means a standard 10 V gate-drive rail hits the minimum on-resistance. ## Package and mounting — PG-TDSON-8-6 footprint notes The 8-pin body is compact, but the pad area dominates the footprint — check the recommended land pattern in the datasheet before layout release. For a BOM freeze or new-design qualification, this part is a clean entry — no near-term supply risk from the manufacturer side. The OptiMOS series is a mature Infineon portfolio, so datasheet and application-note support are well established.","metaTitle":"Infineon BSC0901NSIATMA1 OptiMOS N-Ch MOSFET, 30 V, 2 mOhm","metaDescription":"Infineon BSC0901NSIATMA1 OptiMOS N-Channel MOSFET, 30 V, 28 A (Ta) / 100 A (Tc), 2 mOhm Rds(on) at 10 V. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2mOhm @ 30A, 10V","Power Dissipation (Max)":"2.5W (Ta), 69W (Tc)","Supplier Device Package":"PG-TDSON-8-6","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 15 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2600 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"28A (Ta), 100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.58","priceTiers":[{"qty":1,"price":"$1.58000","currency":"USD"},{"qty":10,"price":"$1.41600","currency":"USD"},{"qty":100,"price":"$1.10400","currency":"USD"},{"qty":500,"price":"$0.91202","currency":"USD"},{"qty":1000,"price":"$0.72002","currency":"USD"},{"qty":2000,"price":"$0.67202","currency":"USD"},{"qty":5000,"price":"$0.63841","currency":"USD"},{"qty":10000,"price":"$0.62610","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC0901NSIATMA1/alternatives.json"},"ai":{"faq":[{"question":"Does BSC0901NSIATMA1 have a replacement or equivalent?","answer":"The IPD50R950CEAUMA1 is a different device class — a 500 V CoolMOS CE N-channel MOSFET with 950 mOhm Rds(on) and 4.3 A switching current. It is not a functional replacement for this 30 V, 100 A OptiMOS part. No direct pin-compatible equivalent is listed in the official cross-reference."},{"question":"Is BSC0901NSIATMA1 RoHS compliant?","answer":"Yes, the BSC0901NSIATMA1 is ROHS3 compliant, per the Infineon lifecycle record."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC0901NSIATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC0901NSIATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}