{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC084P03NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC084P03NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSC084P03NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC084P03NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS P-Channel MOSFET, BSC084P03NS3GATMA1, 30 V Vdss, 8.4 mOhm Rds(on) @ 50 A, 10 V, 14.9 A (Ta) / 78.6 A (Tc), PG-TDSON-8-5 package, -55 to 150 °C junction.","salesMarkdown":"## P-channel 30 V OptiMOS in a PG-TDSON-8-5 The Infineon BSC084P03NS3GATMA1 is a P-channel enhancement-mode MOSFET from the OptiMOS series, built on a trench MOSFET process. The continuous drain current is rated 14.9 A at 25°C ambient (Ta) and 78.6 A at the case (Tc), reflecting the thermal limit of the 8-PowerTDFN package versus the die capability. The 2.5 W (Ta) / 69 W (Tc) power dissipation split tells the buyer that a heatsink or board copper area is needed to approach the higher current rating. ## Gate charge and drive voltage Total gate charge Qg is 58 nC at Vgs = 10 V. At a 100 kHz switching frequency, the average gate-drive current is 5.8 mA — well within the capability of a standard MOSFET driver, but the 4785 pF input capacitance at 15 V Vds means the driver must source a peak current high enough to charge Ciss within the desired rise time. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V, with the 8.4 mOhm figure quoted at 10 V. At 6 V the on-resistance will be higher — the datasheet curve (not reproduced here) shows the typical increase. For designs running from a 5 V rail, the 3.1 V max threshold at 105 µA leaves little gate-drive margin; a 10 V supply is preferred for full performance. ## Temperature range and package Junction temperature range is -55°C to 150°C, covering automotive under-hood and industrial environments without derating. The PG-TDSON-8-5 package (8-PowerTDFN) is a surface-mount package with an exposed drain pad on the bottom — the PCB copper area under the pad sets the thermal resistance to ambient. ROHS3 compliant per the lifecycle record, with no exemptions that would block EU or Asian production lines. ## Sourcing and lifecycle No official second-source or pin-compatible alternate is listed in the Infineon portfolio for this exact PG-TDSON-8-5 footprint. The IPD50R950CEAUMA1 is a CoolMOS N-channel part in a different package and voltage class — not a functional replacement for a P-channel 30 V load switch.","metaTitle":"Infineon BSC084P03NS3GATMA1 P-Channel MOSFET, 30 V, 8.4 mOhm","metaDescription":"Infineon OptiMOS P-channel MOSFET, 30 V drain-source, 8.4 mOhm Rds(on) at 50 A, 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.1V @ 105µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"8.4mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 69W (Tc)","Supplier Device Package":"PG-TDSON-8-5","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"4785 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"14.9A (Ta), 78.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.11","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.49000","currency":"USD"},{"qty":10,"price":"$1.32900","currency":"USD"},{"qty":100,"price":"$1.03580","currency":"USD"},{"qty":500,"price":"$0.85564","currency":"USD"},{"qty":1000,"price":"$0.67551","currency":"USD"},{"qty":2000,"price":"$0.63048","currency":"USD"},{"qty":5000,"price":"$0.59895","currency":"USD"},{"qty":10000,"price":"$0.58740","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/11ac673270a905967e5e40d6a27026ac.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSC084P03NS3G?","answer":"This is the conduction-loss ceiling for a load-switch application."},{"question":"Is BSC084P03NS3GATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant with no exemptions that would restrict use in EU or Asian production."},{"question":"What is the gate charge of BSC084P03NS3G?","answer":"This sets the average gate-drive current needed for a given switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC084P03NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC084P03NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}