{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC036NE7NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC036NE7NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSC036NE7NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC036NE7NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 75 V Vdss, 100 A Id, 3.6 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55 to 150 °C operating range.","salesMarkdown":"## Gate charge and switching — what 63.4 nC buys Total gate charge is 63.4 nC at 10 V. Input capacitance is 4400 pF at 37.5 V drain-source. ## Temperature range — where it runs Rated for -55 to 150 °C junction temperature. The 3.8 V threshold at 110 µA means it turns on hard with a 10 V gate. It is ROHS3 compliant. No official second-source is listed, so if you need dual sourcing for production, qualify a second vendor's 75 V, 3.6 mOhm N-channel in the same footprint.","metaTitle":"Infineon BSC036NE7NS3GATMA1 N-Channel MOSFET, 75 V, 100 A","metaDescription":"Infineon OptiMOS N-channel MOSFET, 75 V Vdss, 100 A Id, 3.6 mOhm Rds(on) at 10 V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 110µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.6mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 156W (Tc)","Supplier Device Package":"PG-TDSON-8-7","Gate Charge (Qg) (Max) @ Vgs":"63.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"4400 pF @ 37.5 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.21","priceTiers":[{"qty":1,"price":"$3.21000","currency":"USD"},{"qty":10,"price":"$2.69700","currency":"USD"},{"qty":100,"price":"$2.18160","currency":"USD"},{"qty":500,"price":"$1.93920","currency":"USD"},{"qty":1000,"price":"$1.66044","currency":"USD"},{"qty":2000,"price":"$1.56348","currency":"USD"},{"qty":5000,"price":"$1.50000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/956d020c7986b017b35a50015c398e58.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC036NE7NS3GATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSC036NE7NS3GATMA1?","answer":"Maximum on-resistance is 3.6 mOhm at 50 A drain current with 10 V gate drive."},{"question":"What is the equivalent part for BSC036NE7NS3GATMA1?","answer":"No official cross-reference is listed. The IPD50R950CEAUMA1 is a different class — 500 V, 950 mOhm, CoolMOS CE — not a functional equivalent for a 75 V, 3.6 mOhm design. For a second source, look for another 75 V, 3.6 mOhm N-channel in the same PG-TDSON-8-7 footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC036NE7NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC036NE7NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}