{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC035N10NS5ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC035N10NS5ATMA1","canonicalUrl":"https://icboms.com/infineon/BSC035N10NS5ATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC035N10NS5ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ BSC035N10NS5ATMA1, N-Channel MOSFET, 100V Vdss, 100A Id, 3.5mOhm Rds(on) at 10V, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate drive and switching — what the numbers mean for your driver stage Gate charge is 87 nC at 10 V. Input capacitance is 6500 pF at 50 V drain bias. ## Lifecycle and sourcing reality The BSC035N10NS5ATMA1 carries an active lifecycle status and is ROHS3 compliant. Infineon lists it as a current-production part.","metaTitle":"Infineon BSC035N10NS5ATMA1 OptiMOS N-Ch MOSFET, 100V 100A","metaDescription":"Infineon OptiMOS BSC035N10NS5ATMA1 N-channel MOSFET, 100V Vdss, 100A Id, 3.5mOhm Rds(on). Active, ROHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 115µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.5mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 156W (Tc)","Supplier Device Package":"PG-TDSON-8-7","Gate Charge (Qg) (Max) @ Vgs":"87 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"6500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.3","priceTiers":[{"qty":1,"price":"$3.30000","currency":"USD"},{"qty":10,"price":"$2.77200","currency":"USD"},{"qty":100,"price":"$2.24210","currency":"USD"},{"qty":500,"price":"$1.99302","currency":"USD"},{"qty":1000,"price":"$1.70652","currency":"USD"},{"qty":2000,"price":"$1.60687","currency":"USD"},{"qty":5000,"price":"$1.54162","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/502ddba7405a3b753a715ed00c1041c7.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC035N10NS5ATMA1/alternatives.json"},"ai":{"faq":[{"question":"Is BSC035N10NS5ATMA1 obsolete or end-of-life?","answer":"No. The BSC035N10NS5ATMA1 carries an active lifecycle status with no end-of-life notice published. It remains a current-production part in Infineon's OptiMOS™ 5 portfolio."},{"question":"Can BSC035N10NS5ATMA1 be used in a 12V system?","answer":"Yes, but it is overkill. The 100 V drain-source rating gives huge headroom on a 12 V rail, but the 3.5 mOhm Rds(on) is higher than what a 30 V FET would offer at the same die size. It will work — just not the most cost-effective choice for a 12 V-only design."},{"question":"Is BSC035N10NS5ATMA1 compatible with standard gate drive voltages?","answer":"Yes. The Rds(on) is specified at 10 V gate drive, and the device is also characterised at 6 V. The gate threshold is 3.8 V maximum at 115 µA drain current, so a standard 10 V or 12 V gate drive from a PWM controller or gate-driver IC will fully enhance the channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC035N10NS5ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC035N10NS5ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}