{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC027N04LSGATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC027N04LSGATMA1","canonicalUrl":"https://icboms.com/infineon/BSC027N04LSGATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC027N04LSGATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS BSC027N04LSGATMA1, N-channel MOSFET, 40 V drain-source voltage, 100 A continuous drain at case temperature, 2.7 mOhm max on-resistance at 50 A, 10 V gate drive, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BSC027N04LSGATMA1 is an OptiMOS N-channel MOSFET rated for 40 V drain-source voltage and a continuous drain current of 100 A at the case temperature, with a maximum on-resistance of 2.7 mOhm at 50 A and 10 V gate drive. The 83 W package limit at Tc can handle the dissipation with adequate heatsinking. The 24 A rating at ambient temperature (Ta) is the board-limited, no-heatsink ceiling. Gate charge is 85 nC at 10 V. A gate driver capable of sourcing and sinking a few amps will keep switching losses manageable. If the design drives the gate at 4.5 V instead of 10 V, expect the on-resistance to rise above the 2.7 mOhm minimum. ## Package and mounting — PG-TDSON-8-1 The part comes in an 8-PowerTDFN package, supplier device code PG-TDSON-8-1, which is a surface-mount, dual-side-cooled package. The exposed drain pad on the bottom requires a thermal via pattern on the PCB to transfer heat to the ground plane.","metaTitle":"Infineon BSC027N04LSGATMA1 N-Channel MOSFET, 40 V, 100 A","metaDescription":"Infineon BSC027N04LSGATMA1 OptiMOS N-channel MOSFET, 40 V Vdss, 100 A continuous drain at Tc, 2.7 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 49µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.7mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 83W (Tc)","Supplier Device Package":"PG-TDSON-8-1","Gate Charge (Qg) (Max) @ Vgs":"85 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"6800 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"24A (Ta), 100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.52","priceTiers":[{"qty":1,"price":"$1.73000","currency":"USD"},{"qty":10,"price":"$1.54500","currency":"USD"},{"qty":100,"price":"$1.20450","currency":"USD"},{"qty":500,"price":"$0.99504","currency":"USD"},{"qty":1000,"price":"$0.78556","currency":"USD"},{"qty":2000,"price":"$0.73320","currency":"USD"},{"qty":5000,"price":"$0.69653","currency":"USD"},{"qty":10000,"price":"$0.68310","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/efb27f51a9ccfd6bf7cee85bfcb0e929.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC027N04LSGATMA1/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC027N04LSGATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC027N04LSGATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}