{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC026N02KSG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC026N02KSG","canonicalUrl":"https://icboms.com/infineon/BSC026N02KSG","factsUrl":"https://icboms.com/api/mcp/products/BSC026N02KSG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™2 N-Channel MOSFET, 20 V Vds, 2.6 mΩ Rds(on) at 4.5 V, 134 A continuous drain, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 2.6 mΩ at 4.5 V — logic-level gate drive without the headroom tax The BSC026N02KSG: The 2.6 mΩ maximum on-resistance at 4.5 V gate drive with 50 A is a logic-level threshold that lets a PWM signal from an MCU or gate driver turn the FET fully on without a secondary gate boost. The minimum drive voltage for the lowest Rds(on) is 2.5 V. Infineon lists the BSC026N02KSG as Active in its product portfolio. ## Package and thermal: PG-TDSON-8-1 Housed in an 8-lead PowerTDFN (Infineon's PG-TDSON-8-1), this is a surface-mount package with an exposed drain pad for heat sinking. The thermal resistance splits: 2.8 W maximum dissipation at ambient (Ta) but 78 W at the case (Tc), meaning the board's copper area and via stitching under the pad determine real-world current capability. The 134 A continuous drain rating at 25°C case temperature assumes a well-thermalized layout; at ambient with no heatsink the current is derated to 25 A. ## Switching and drive numbers Gate charge is 52.7 nC at 4.5 V, and input capacitance sits at 7800 pF at 10 V drain. The driver needs to source and sink enough peak current to switch the gate through the Miller plateau without excessive slew.","metaTitle":"Infineon BSC026N02KSG OptiMOS™2 N-Channel MOSFET, 20 V","metaDescription":"Infineon BSC026N02KSG OptiMOS™2 N-channel MOSFET: 20 V Vds, 2.6 mΩ Rds(on) at 4.5 V, 134 A Id, PG-TDSON-8-1. Active production.","metaKeywords":null},"attributes":{"series":"OptiMOS™2","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"OptiMOS™2","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±12V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.2V @ 200µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.6mOhm @ 50A, 4.5V","Power Dissipation (Max)":"2.8W (Ta), 78W (Tc)","Supplier Device Package":"PG-TDSON-8-1","Gate Charge (Qg) (Max) @ Vgs":"52.7 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"7800 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"2.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"25A (Ta), 134A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.76","stockQuantity":0,"priceTiers":[{"qty":393,"price":"$0.76000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/m8bnehx2fj/INFNS16144-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC026N02KSG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC026N02KSG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}