{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC016N06NSATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC016N06NSATMA1","canonicalUrl":"https://icboms.com/infineon/BSC016N06NSATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC016N06NSATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, 60 V drain-source, 100 A continuous drain at Tc, 1.6 mOhm max Rds(on) at 50 A, 10 V, PG-TDSON-8 FL surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"## 1.6 mOhm at 50 A — the conduction-loss floor for a 60 V switch The BSC016N06NSATMA1 N-Channel MOSFET has a 1.6 mOhm max Rds(on) at 50 A, 10 V, and a 139 W power dissipation rating at the case. ## Gate charge and switching speed — 71 nC at 10 V Total gate charge is 71 nC at 10 V, with an input capacitance of 5200 pF at 30 V drain-source. The drive voltage range of 6 V to 10 V allows use with standard 10 V or logic-level supplies. ## Package and thermal path — PG-TDSON-8 FL The thermal resistance from junction to case is specified at 1.08 °C/W (derived from 139 W at 150 °C max), so the board copper area and via count under the pad determine the real-world current capability. The 30 A rating at 25 °C ambient with no heatsink is the practical limit for a standard two-layer board; the 100 A rating at case temperature assumes a heatsink or forced air.","metaTitle":"BSC016N06NSATMA1 OptiMOS N-Ch 60V 100A MOSFET","metaDescription":"Infineon BSC016N06NSATMA1 OptiMOS N-channel 60V MOSFET, 100A continuous drain, 1.6mOhm Rds(on) at 50A. Active production.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.8V @ 95µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.6mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 139W (Tc)","Supplier Device Package":"PG-TDSON-8 FL","Gate Charge (Qg) (Max) @ Vgs":"71 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"5200 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"30A (Ta), 100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.01","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.53000","currency":"USD"},{"qty":10,"price":"$2.10400","currency":"USD"},{"qty":100,"price":"$1.67430","currency":"USD"},{"qty":500,"price":"$1.41670","currency":"USD"},{"qty":1000,"price":"$1.20204","currency":"USD"},{"qty":2000,"price":"$1.14194","currency":"USD"},{"qty":5000,"price":"$1.09901","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/96464d513152619f02afa806c21b61f4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can BSC016N06NSATMA1 be used for 48V power systems?","answer":"Yes. The 60 V drain-source rating provides 12 V of headroom above a 48 V nominal bus, which is adequate for transients on a regulated 48 V rail. The 1.6 mOhm Rds(on) keeps conduction losses under 1 W at 25 A continuous."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC016N06NSATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC016N06NSATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}