{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC010N04LSATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC010N04LSATMA1","canonicalUrl":"https://icboms.com/infineon/BSC010N04LSATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC010N04LSATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ BSC010N04LSATMA1, N-channel MOSFET, 40 V drain-source, 1 mOhm Rds(on) at 10 V, 100 A continuous drain current, PG-TDSON-8 FL surface-mount package.","salesMarkdown":"The Infineon BSC010N04LSATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for 40 V drain-to-source and a continuous drain current of 100 A at the case (38 A at ambient). The ROHS3 compliance is confirmed.","metaTitle":"Infineon BSC010N04LSATMA1 N-Channel MOSFET, 40 V, 1 mOhm","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 40 V drain-source, 1 mOhm Rds(on) at 10 V, 100 A continuous drain current.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1mOhm @ 50A, 10V","Power Dissipation (Max)":"2.5W (Ta), 139W (Tc)","Supplier Device Package":"PG-TDSON-8 FL","Gate Charge (Qg) (Max) @ Vgs":"95 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"6800 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"38A (Ta), 100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.15","priceTiers":[{"qty":1,"price":"$2.15000","currency":"USD"},{"qty":10,"price":"$1.78200","currency":"USD"},{"qty":100,"price":"$1.41800","currency":"USD"},{"qty":500,"price":"$1.19988","currency":"USD"},{"qty":1000,"price":"$1.01808","currency":"USD"},{"qty":2000,"price":"$0.96718","currency":"USD"},{"qty":5000,"price":"$0.93082","currency":"USD"},{"qty":10000,"price":"$0.90000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8059e49956a62a762c0a272a2080feb1.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC010N04LSATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) at operating temperature?","answer":"The Rds(on) is 1 mOhm at 25 °C and 10 V drive. At a 125 °C junction temperature, expect the on-resistance to approximately double — budget derating for the load current accordingly."},{"question":"What gate drive voltage does this MOSFET need?","answer":"The BSC010N04LSATMA1 specifies drive voltages of 4.5 V and 10 V for achieving the rated Rds(on). For the lowest on-resistance, use 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC010N04LSATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC010N04LSATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}