{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BM60059FV-CE2","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"BM60059FV-CE2","canonicalUrl":"https://icboms.com/rohm/BM60059FV-CE2","factsUrl":"https://icboms.com/api/mcp/products/BM60059FV-CE2","rawCanonicalId":null},"summary":{"shortDescription":"ROHM BM60059FV-CE2, single-channel digital isolator with integrated gate driver, magnetic coupling, 2500Vrms isolation, 1A peak output, 100kV/µs CMTI, 28-SSOP package, -40°C to 125°C.","salesMarkdown":"## What this isolated gate driver brings to a power stage The ROHM BM60059FV-CE2 is a single-channel digital isolator with a built-in gate driver, using magnetic coupling to deliver 2500Vrms of galvanic isolation between the logic-side input and the power-stage output. It is designed to drive the gate of a power MOSFET, IGBT, or SiC MOSFET directly, with a peak output current rating of 1A. ## Propagation delay and pulse-width distortion — timing budget for dead-time The maximum propagation delay from input to output is 450ns for both rising and falling edges (tpLH / tpHL). Pulse-width distortion is capped at 400ns maximum. In a half-bridge or full-bridge topology, these numbers set the lower bound on the dead-time you need to program into the controller — if you try to run dead-time below the PWD spec, you risk shoot-through on one switching cycle. The 1A peak output is enough to drive the gate charge of a typical SiC MOSFET or medium-current IGBT through the Miller plateau without excessive switching loss, but the 450ns delay means the dead-time budget will be in the hundreds of nanoseconds, not single-digit nanoseconds. At the low end, a 5V rail drives the gate of a logic-level MOSFET; at 24V, the same part drives a standard IGBT or a SiC MOSFET that needs a +15V to +20V gate drive. The 1A peak output current is a typical figure — enough to charge the gate capacitance quickly, but not a high-current driver for paralleled modules. The high-side and low-side output currents (40µA and 160µA respectively) are the static drive levels, not the switching peak; the 1A peak is what matters for the turn-on and turn-off edges.","metaTitle":"ROHM BM60059FV-CE2 isolated gate driver, 2500Vrms, 1A peak","metaDescription":"ROHM BM60059FV-CE2 digital isolator with magnetic coupling, 2500Vrms isolation, 1A peak gate drive, 100kV/µs CMTI.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Power Management (PMIC / Gate Driver)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"Magnetic Coupling","Mounting Type":"Surface Mount","Package / Case":"28-SSOP (0.315\\\", 8.00mm Width)","Approval Agency":"UL","lifecycle_stage":"eol_hot","Number of Channels":"1","Voltage - Isolation":"2500Vrms","Current - Peak Output":"1A","Operating Temperature":"-40°C ~ 125°C","Supplier Device Package":"28-SSOP-BW","Voltage - Output Supply":"4.5V ~ 24V","Current - Output High, Low":"40µA, 160µA","Pulse Width Distortion (Max)":"400ns","Propagation Delay tpLH / tpHL (Max)":"450ns, 450ns","Common Mode Transient Immunity (Min)":"100kV/µs"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.72","priceTiers":[{"qty":1,"price":"$8.72000","currency":"USD"},{"qty":10,"price":"$7.87600","currency":"USD"},{"qty":25,"price":"$7.50960","currency":"USD"},{"qty":100,"price":"$6.52060","currency":"USD"},{"qty":250,"price":"$6.22756","currency":"USD"},{"qty":500,"price":"$5.67806","currency":"USD"},{"qty":1500,"price":"$4.94541","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b1a3e91c84118ccd0c38ff9469741287.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BM60059FV-CE2/alternatives.json"},"ai":{"faq":[{"question":"Can BM60059FV-CE2 drive SiC MOSFETs?","answer":"The 1A peak output current and 100kV/µs CMTI make it suitable for driving SiC MOSFETs in many designs, provided the gate charge of the specific SiC device does not exceed what the driver can deliver within the switching period. The 4.5V to 24V output supply range covers the typical +15V to +18V gate drive voltage for SiC parts. The 450ns propagation delay means the dead-time budget must account for that latency — it will not match a sub-100ns driver."},{"question":"What is the CMTI of BM60059FV-CE2?","answer":"The minimum common-mode transient immunity is 100kV/µs. This is the key specification for fast-switching power stages — it tells you the driver will not latch or mis-fire when the half-bridge midpoint slews at high dV/dt, which is typical in SiC and GaN designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/BM60059FV-CE2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/BM60059FV-CE2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}