{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFU530AR","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"BFU530AR","canonicalUrl":"https://icboms.com/nxp/BFU530AR","factsUrl":"https://icboms.com/api/mcp/products/BFU530AR","rawCanonicalId":null},"summary":{"shortDescription":"NXP BFU530AR NPN RF transistor, 12 V VCEO, 11 GHz fT, 18 dB gain, 0.6 dB NF at 900 MHz, AEC-Q101, SOT-23-3, surface mount, -40 to 150 °C TJ.","salesMarkdown":"## RF gain block for automotive and industrial ISM-band stages The NXP BFU530AR is an NPN silicon RF transistor in a SOT-23 (TO-236AB) package, designed for low-noise amplifier and driver stages up to 11 GHz transition frequency. The 12 V collector-emitter breakdown and 40 mA maximum collector current give enough headroom for +10 dBm output stages without pushing the die hard. The BFU530AR carries AEC-Q101 qualification and an operating junction temperature range of -40 to 150 °C. That puts it squarely into automotive under-hood and chassis-domain RF stages — tire-pressure monitor transmitters, keyless-entry receivers, and 77 GHz radar sensor pre-drivers — where the 150 °C junction rating covers the hot-soak condition on the engine bay firewall. For industrial designs, the same temperature margin simplifies derating calculations when the transistor sits near a 70 °C ambient power supply or a motor-drive heatsink. ## SOT-23 footprint and thermal reality The SOT-23 (TO-236AB) package is the standard three-lead small-signal footprint — the same land pattern as a 2N3904 or MMBT3904, so the board layout is already done if the BOM previously used a general-purpose NPN. The 450 mW power dissipation limit is the package ceiling, not the die limit; at 150 °C junction and 25 °C ambient the thermal derating leaves about 250 mW usable in still air. If the stage runs at 10 mA and 8 V (80 mW DC), the junction rise is roughly 50 °C above ambient — well inside the 150 °C absolute maximum. ## DC gain and bias stability The DC current gain (hFE) is specified at 60 minimum at 10 mA collector current and 8 V collector-emitter — a typical bias point for a 900 MHz LNA. This tight hFE floor means the bias network can use a simple emitter resistor without worrying about part-to-part variation pulling the collector current out of the low-noise sweet spot. The 11 GHz fT also tells you the device has enough fT margin at 900 MHz to keep the gain flat across the band without external compensation.","metaTitle":"BFU530AR NPN RF Transistor, 12V 11GHz, AEC-Q101, 18dB Gain","metaDescription":"BFU530AR NPN RF transistor from NXP, 12V VCEO, 11GHz fT, 18dB gain at 900MHz, 0.6dB NF. AEC-Q101 qualified, SOT-23 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Gain":"18dB","Grade":"Automotive","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"450mW","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-236-3, SC-59, SOT-23-3","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"-40°C ~ 150°C (TJ)","Frequency - Transition":"11GHz","Supplier Device Package":"SOT-23 (TO-236AB)","Noise Figure (dB Typ @ f)":"0.6dB @ 900MHz","Current - Collector (Ic) (Max)":"40mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"60 @ 10mA, 8V","Voltage - Collector Emitter Breakdown (Max)":"12V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.59","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.59000","currency":"USD"},{"qty":10,"price":"$0.51800","currency":"USD"},{"qty":25,"price":"$0.48640","currency":"USD"},{"qty":100,"price":"$0.39680","currency":"USD"},{"qty":250,"price":"$0.36860","currency":"USD"},{"qty":500,"price":"$0.31370","currency":"USD"},{"qty":1000,"price":"$0.25096","currency":"USD"},{"qty":3000,"price":"$0.22744","currency":"USD"},{"qty":6000,"price":"$0.21175","currency":"USD"},{"qty":15000,"price":"$0.20391","currency":"USD"},{"qty":30000,"price":"$0.19607","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c7d1d908dd00feef99766563f60c438f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gain of BFU530AR at 900 MHz?","answer":"The BFU530AR provides 18 dB small-signal gain at 900 MHz, with a noise figure of 0.6 dB at the same frequency. This combination makes it a strong candidate for the LNA stage in 868/915 MHz ISM-band receivers."},{"question":"Is BFU530AR AEC-Q101 qualified?","answer":"Yes, the BFU530AR is AEC-Q101 qualified, making it suitable for automotive-grade RF applications such as tire-pressure monitoring, keyless entry, and V2X receiver front-ends."},{"question":"What is the maximum frequency of BFU530AR?","answer":"The BFU530AR has a transition frequency (fT) of 11 GHz, which gives ample gain margin for designs up to the 2.4 GHz ISM band and supports 77 GHz radar pre-driver stages when used as a buffer."},{"question":"What is the closest pin-compatible alternative to BFU530AR?","answer":"Within the NXP BFU series, the BFU520AR shares the same SOT-23 footprint and pinout but offers a lower fT of 10 GHz and slightly lower gain. For a drop-in replacement with identical 11 GHz fT, the BFU530AW in SOT-343 is not pin-compatible. The BFU530AR itself is the automotive-grade variant; the commercial-grade BFU530A (without the R suffix) is the same die but lacks AEC-Q101 qualification."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/BFU530AR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/BFU530AR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}