{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFS483H6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFS483H6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BFS483H6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BFS483H6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies BFS483H6327XTSA1 RF transistor, dual NPN, 12V, 65mA, 8GHz transition frequency, 19dB gain, SOT-363 surface-mount package.","salesMarkdown":"## 8 GHz fT and 19 dB gain — the RF front-end fit The BFS483H6327XTSA1: The 8 GHz transition frequency puts this transistor solidly into the UHF and low-microwave band — 900 MHz GSM, 1.8 GHz DCS, 2.4 GHz ISM, and 5 GHz WLAN front-ends are all within its gain bandwidth. The 19 dB gain figure is the forward transmission coefficient (S21) at the manufacturer's specified bias point; in a single-stage common-emitter LNA, that translates to roughly 17–18 dB of usable gain after matching network losses. Noise figure runs 0.9 dB typical at 900 MHz and 1.4 dB at 1.8 GHz — low enough for a receiver front-end where every tenth of a dB of NF directly adds to the system noise floor. The 65 mA maximum collector current and 12 V collector-emitter breakdown cover the bias range for a typical small-signal LNA or oscillator buffer; you are not pushing the SOA limits at 5–10 mA and 3–5 V. ## Dual NPN in SOT-363 — board-level fit and rework Two NPN transistors share the same SOT-363 package (6-VSSOP, SC-88, Infineon's PG-SOT363-PO). The footprint is 2.1 mm × 2.0 mm with 0.65 mm pin pitch — standard for a dual RF transistor, and the same land pattern works for the BFS483 and its siblings. Surface-mount only; the small body means the hot-air rework profile is short — 150 °C preheat for 60 seconds, then 260 °C peak for 10 seconds on the leads, and the part lifts clean. The 450 mW maximum power dissipation is shared between the two die. In practice, each transistor dissipates maybe 20–30 mW in a typical LNA stage, so the thermal margin is generous. No exposed pad — heat flows through the collector leads, so the PCB copper pour under the package matters less than for a power transistor.","metaTitle":"Infineon BFS483H6327XTSA1 RF Transistor, 8GHz, 19dB, SOT-363","metaDescription":"Infineon BFS483H6327XTSA1 dual NPN RF transistor, 8GHz fT, 19dB gain, 0.9dB NF. Active production, ROHS3 compliant. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Gain":"19dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"450mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Transistor Type":"2 NPN (Dual)","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"8GHz","Supplier Device Package":"PG-SOT363-PO","Noise Figure (dB Typ @ f)":"0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz","Current - Collector (Ic) (Max)":"65mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 15mA, 8V","Voltage - Collector Emitter Breakdown (Max)":"12V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.73","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.73000","currency":"USD"},{"qty":10,"price":"$0.64400","currency":"USD"},{"qty":25,"price":"$0.60520","currency":"USD"},{"qty":100,"price":"$0.49390","currency":"USD"},{"qty":250,"price":"$0.45880","currency":"USD"},{"qty":500,"price":"$0.39046","currency":"USD"},{"qty":1000,"price":"$0.31237","currency":"USD"},{"qty":3000,"price":"$0.28309","currency":"USD"},{"qty":6000,"price":"$0.26357","currency":"USD"},{"qty":15000,"price":"$0.25380","currency":"USD"},{"qty":30000,"price":"$0.24404","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8cde2673b034849ba6d72633ace533ab.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is BFS483H6327XTSA1's gain and noise figure?","answer":"19 dB gain (forward transmission coefficient at the manufacturer's bias point). Noise figure is 0.9 dB typical at 900 MHz and 1.4 dB at 1.8 GHz — suitable for low-noise RF front-end stages in the UHF and low-microwave bands."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFS483H6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFS483H6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}