{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFR750L3RHE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFR750L3RHE6327","canonicalUrl":"https://icboms.com/infineon/BFR750L3RHE6327","factsUrl":"https://icboms.com/api/mcp/products/BFR750L3RHE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFR750L3RHE6327 NPN RF bipolar transistor, 37 GHz transition frequency, 21 dB gain, 0.6 dB noise figure at 1.8 GHz, 90 mA Ic, 4.7 V Vce, PG-TSLP-3 surface-mount package.","salesMarkdown":"## RF transistor for low-noise front-ends through C-band The Infineon BFR750L3RHE6327 is an NPN silicon RF bipolar transistor designed for small-signal amplification up into C-band. Its 37 GHz transition frequency and 21 dB gain make it a candidate for LNA stages in base station receivers, satellite downconverters, and test equipment front-ends. The noise figure runs 0.6 dB to 1.1 dB across 1.8 GHz to 6 GHz, which keeps the system noise floor low in the first gain stage. ## Package and mounting — board-area fit Housed in the PG-TSLP-3 package, which is the Infineon designation for a 3-pin leadless plastic package — essentially a SOT-883 footprint. Surface-mount, no through-hole option. The tiny body saves board space in dense RF modules, but the exposed pad (if present) needs a thermal via to the ground plane to keep junction temperature under the 150 °C (TJ) maximum. Store the reels dry — moisture-sensitive level is typical for this package class. ## DC bias and safe operating area Collector current is rated to 90 mA, collector-emitter breakdown at 4.7 V. That 4.7 V ceiling means this transistor is intended for low-voltage RF stages. Infineon continues to manufacture this part through its standard RF product line.","metaTitle":"BFR750L3RHE6327 RF NPN Transistor, 37 GHz fT, 21 dB Gain","metaDescription":"BFR750L3RHE6327 NPN RF bipolar transistor from Infineon. 37 GHz transition frequency, 21 dB gain, 0.6 dB noise figure at 1.8 GHz.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"21dB","Package":"Bulk","Power - Max":"360mW","Mounting Type":"Surface Mount","Package / Case":"SC-101, SOT-883","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"37GHz","Supplier Device Package":"PG-TSLP-3","Noise Figure (dB Typ @ f)":"0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz","Current - Collector (Ic) (Max)":"90mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 60mA, 3V","Voltage - Collector Emitter Breakdown (Max)":"4.7V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.29","priceTiers":[{"qty":1023,"price":"$0.29000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/96b377c7787bdf0acd611c390bce59f2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BFR750L3RHE6327/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFR750L3RHE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFR750L3RHE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}