{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFR193WH6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFR193WH6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BFR193WH6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BFR193WH6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFR193WH6327XTSA1 RF NPN transistor, 12V Vce, 80 mA Ic, 8 GHz fT, 10.5 dB ~ 16 dB gain, 1 dB ~ 1.6 dB noise figure @ 900 MHz ~ 1.8 GHz, 580 mW, SOT323, surface mount.","salesMarkdown":"## 8 GHz NPN for RF front-ends The Infineon BFR193WH6327XTSA1 is an NPN RF bipolar transistor in a SOT323 (PG-SOT323) surface-mount package, designed for low-noise amplifier and oscillator stages up to several gigahertz. Its 8 GHz transition frequency and 10.5 dB to 16 dB gain range make it a fit for LNA, driver, and buffer circuits in wireless infrastructure, ISM-band transceivers, and satellite receivers. The noise figure of 1 dB to 1.6 dB at 900 MHz to 1.8 GHz keeps the signal chain clean in the common cellular and ISM bands. ## Active status — no LTB risk The BFR193WH6327XTSA1 carries an Active product status and is ROHS3 compliant. No last-time-buy or end-of-life notice is in effect, so it can be specified into new designs without near-term obsolescence risk. The part ships in Tape & Reel or Cut Tape options, consistent with volume SMT assembly. ## Gain staging and noise floor Gain is specified as 10.5 dB to 16 dB — a spread that reflects bias and frequency dependence. At 900 MHz, the part typically lands near the upper end; at 1.8 GHz it drops toward 10.5 dB. The DC current gain (hFE) is a minimum of 70 at 30 mA, 8 V, so the RF gain is not limited by beta roll-off at moderate bias. Noise figure of 1 dB to 1.6 dB over the same frequency band is competitive for a general-purpose RF transistor in this package class.","metaTitle":"Infineon BFR193WH6327XTSA1 RF NPN Transistor, 8 GHz fT, 12V","metaDescription":"Infineon BFR193WH6327XTSA1 RF NPN transistor: 8 GHz transition frequency, 10.5-16 dB gain, 1-1.6 dB noise figure at 900 MHz-1.8 GHz, 80 mA Ic, 580 mW, SOT323.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Gain":"10.5dB ~ 16dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"580mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"8GHz","Supplier Device Package":"PG-SOT323","Noise Figure (dB Typ @ f)":"1dB ~ 1.6dB @ 900MHz ~ 1.8GHz","Current - Collector (Ic) (Max)":"80mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 30mA, 8V","Voltage - Collector Emitter Breakdown (Max)":"12V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.5","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.44000","currency":"USD"},{"qty":10,"price":"$0.33000","currency":"USD"},{"qty":25,"price":"$0.29720","currency":"USD"},{"qty":100,"price":"$0.20530","currency":"USD"},{"qty":250,"price":"$0.17292","currency":"USD"},{"qty":500,"price":"$0.14050","currency":"USD"},{"qty":1000,"price":"$0.10807","currency":"USD"},{"qty":3000,"price":"$0.09726","currency":"USD"},{"qty":6000,"price":"$0.09186","currency":"USD"},{"qty":15000,"price":"$0.08375","currency":"USD"},{"qty":30000,"price":"$0.07835","currency":"USD"},{"qty":75000,"price":"$0.07025","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9bcc84203e51db52cef4f96accc60968.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum frequency of BFR193WH6327XTSA1?","answer":"The transition frequency (fT) is 8 GHz, which is the frequency at which the current gain drops to unity. Practical amplifier gain is useful well into the low gigahertz range."},{"question":"What is the equivalent or replacement for BFR193WH6327XTSA1?","answer":"The BFP193E6327HTSA1 is a close functional peer with a higher gain range of 12 dB to 18 dB, same 8 GHz fT, same 580 mW power, and same SOT323 footprint. It is a direct alternative for gain-critical stages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFR193WH6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFR193WH6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}