{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFP842ESDH6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFP842ESDH6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BFP842ESDH6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BFP842ESDH6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFP842ESDH6327XTSA1 NPN RF transistor, 60 GHz fT, 26 dB gain, 0.65 dB noise figure at 3.5 GHz, 3.7 V Vce breakdown, 40 mA Ic max, 120 mW power, SC-82A/SOT-343 package, surface mount.","salesMarkdown":"## What this transistor brings to the RF front end The Infineon BFP842ESDH6327XTSA1 is a silicon-germanium (SiGe) NPN RF transistor designed for low-noise amplifier stages up to C-band and X-band frequencies. Its headline specs — a transition frequency of 60 GHz, a noise figure of 0.65 dB at 3.5 GHz, and a gain of 26 dB — make it a natural fit for the first LNA after the antenna filter in base stations, satellite downconverters, and 5G small-cell receivers. The 3.7 V collector-emitter breakdown means this part runs from a 3.3 V or 3.6 V rail, not a 5 V or 12 V supply, so check your bias network before dropping it into a legacy design. ## Noise figure and gain — the pair that matters At 3.5 GHz the BFP842ESDH6327XTSA1 delivers a noise figure of 0.65 dB and a gain of 26 dB. That noise figure is the number that decides whether this transistor earns its place in a receiver chain: every tenth of a dB you save at the LNA directly improves the system noise floor. The 26 dB gain means a single stage can lift a weak signal enough to drive a mixer or a second gain block without an extra buffer. If your design targets a lower band — say 1.8 GHz or 900 MHz — the noise figure will be even better, though the datasheet only specifies it at 3.5 GHz. ## Package and footprint — SOT-343 realities The part comes in a standard SC-82A / SOT-343 package, supplier code PG-SOT343-4-2. That is a four-pin, surface-mount package with a small collector pad underneath — the centre pad is the collector, not a thermal slug, so your PCB footprint should follow the Infineon recommended land pattern for SOT-343. The package is rated for a junction temperature of 150 °C, which gives decent headroom for LNA stages that run warm. ## Sourcing this part — what to expect If you are cross-shopping, the BFP640FH6327XTSA1 is a close functional sibling: same SOT-343 package, 40 GHz fT, 23 dB gain, and a noise figure that ranges from 0.65 dB to 1.2 dB across 1.8 GHz to 6 GHz. The BFP842 gives you higher fT and more gain, so it is the better pick for designs that push past 6 GHz or need extra stage margin.","metaTitle":"Infineon BFP842ESDH6327XTSA1 NPN RF Transistor, 60 GHz fT","metaDescription":"Infineon BFP842ESDH6327XTSA1 NPN RF transistor: 60 GHz fT, 0.65 dB noise figure at 3.5 GHz, 26 dB gain, SOT-343. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Gain":"26dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"120mW","Mounting Type":"Surface Mount","Package / Case":"SC-82A, SOT-343","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"60GHz","Supplier Device Package":"PG-SOT343-4-2","Noise Figure (dB Typ @ f)":"0.65dB @ 3.5GHz","Current - Collector (Ic) (Max)":"40mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"150 @ 15mA, 2.5V","Voltage - Collector Emitter Breakdown (Max)":"3.7V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.52","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.60000","currency":"USD"},{"qty":10,"price":"$0.51100","currency":"USD"},{"qty":25,"price":"$0.47720","currency":"USD"},{"qty":100,"price":"$0.38190","currency":"USD"},{"qty":250,"price":"$0.35460","currency":"USD"},{"qty":500,"price":"$0.30006","currency":"USD"},{"qty":1000,"price":"$0.23186","currency":"USD"},{"qty":3000,"price":"$0.21140","currency":"USD"},{"qty":6000,"price":"$0.20755","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1df707fb8ae968e8f8d34e326e22fb27.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BFP842ESDH6327XTSA1 equivalent to BFP842?","answer":"The BFP842ESDH6327XTSA1 is a specific packaging and reel variant of the BFP842 die. The suffix H6327XTSA1 indicates Tape & Reel packaging. The underlying RF transistor is the same BFP842 design, so the electrical specs are identical to other BFP842 variants in the same package."},{"question":"Is BFP842ESDH6327XTSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant, which means it meets the EU RoHS directive for lead and other restricted substances."},{"question":"What is the closest functional second-source for BFP842ESDH6327XTSA1?","answer":"The BFP640FH6327XTSA1 is the closest functional peer: same SOT-343 package, NPN SiGe, 40 GHz fT, 23 dB gain, and a noise figure of 0.65 dB to 1.2 dB across 1.8 GHz to 6 GHz. It is a drop-in footprint match but has lower fT and gain, so check your gain budget and noise figure target before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFP842ESDH6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFP842ESDH6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}