{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFP740E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFP740E6327","canonicalUrl":"https://icboms.com/infineon/BFP740E6327","factsUrl":"https://icboms.com/api/mcp/products/BFP740E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFP740E6327 SiGe NPN RF transistor, 42 GHz transition frequency, 27 dB gain, 0.5 dB noise figure at 1.8 GHz, 160 mW max power, PG-SOT343-4 package, surface mount, active production.","salesMarkdown":"The BFP740E6327 is an Infineon SiGe NPN RF transistor with a transition frequency of 42 GHz, placing it solidly in the X-band and Ku-band small-signal amplifier class. The 27 dB gain at low current (30 mA max collector) means a single stage can deliver the front-end gain needed for a receiver LNA, reducing the component count in the RF chain. ## Noise figure and gain — the receiver sensitivity budget Noise figure is specified at 0.5 dB to 0.85 dB across 1.8 GHz to 6 GHz — this is the noise floor the transistor adds to the cascade. The 27 dB gain at 25 mA collector current gives enough headroom to drive a mixer or a second gain stage without an extra buffer. ## PG-SOT343-4 footprint — parasitic inductance budget The 4-pin SOT-343 package is the standard small-signal RF transistor footprint. The collector and emitter pin assignments are shared across the Infineon BFP7xx family, so the PCB layout transfers if a gain-tier or noise-figure-tier variant is qualified later. The 160 mW max power at 150 °C junction temperature sets the thermal derating.","metaTitle":"Infineon BFP740E6327 NPN RF Transistor, 42 GHz fT","metaDescription":"Infineon BFP740E6327 SiGe NPN RF transistor, 42 GHz transition frequency, 27 dB gain, 0.5 dB noise figure at 1.8 GHz. Active production, PG-SOT343-4.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"27dB","Package":"Bulk","Power - Max":"160mW","Mounting Type":"Surface Mount","Package / Case":"SC-82A, SOT-343","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"42GHz","Supplier Device Package":"PG-SOT343-4","Noise Figure (dB Typ @ f)":"0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz","Current - Collector (Ic) (Max)":"30mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 25mA, 3V","Voltage - Collector Emitter Breakdown (Max)":"4.7V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.31","stockQuantity":0,"priceTiers":[{"qty":979,"price":"$0.31000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d5065a5937a7660e8b243fb040954b38.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is the BFP740E6327 suitable for high-frequency applications?","answer":"Yes — the 42 GHz transition frequency and 0.5 dB noise figure at 1.8 GHz make it a strong candidate for X-band and Ku-band LNA stages, ISM-band receivers, and microwave point-to-point links up to 6 GHz."},{"question":"Is the BFP740E6327 RoHS compliant?","answer":"Yes — it is listed as ROHS3 compliant, meeting the EU RoHS directive without exemptions."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFP740E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFP740E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}