{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFP720H6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFP720H6327","canonicalUrl":"https://icboms.com/infineon/BFP720H6327","factsUrl":"https://icboms.com/api/mcp/products/BFP720H6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFP720H6327 NPN RF transistor, 45 GHz fT, 10.5 dB to 28.5 dB gain, 0.4 dB to 0.95 dB noise figure, 4.7 V VCEO, 25 mA Ic max, SC-82A / SOT-343 package, surface mount.","salesMarkdown":"The Infineon BFP720H6327 is an NPN silicon-germanium (SiGe) RF transistor designed for low-noise amplification from VHF through X-band. Its 45 GHz transition frequency and noise figure as low as 0.4 dB at 150 MHz make it a candidate for the first LNA stage in base-station receivers, satellite downconverters, and 5G massive-MIMO front-ends. The 4.7 V collector-emitter breakdown and 25 mA maximum collector current suit it for low-voltage, moderate-gain blocks where headroom is tight and noise dominates the link budget. ## Gain and noise — the numbers that drive the BOM decision The 10.5 dB to 28.5 dB gain range covers the spread from a low-gain buffer to a high-gain preamp, depending on bias and frequency. The noise figure floor of 0.4 dB at 150 MHz and 0.95 dB at 10 GHz means this transistor can serve both a 150 MHz IF strip and a 10 GHz downconverter without swapping parts — a useful cross-band flexibility for multi-band radio designs. The 160 minimum DC current gain at 13 mA, 3 V confirms the part has enough beta to work with a simple collector-feedback bias network. No last-time-buy notice is on record, and no official successor has been announced.","metaTitle":"Infineon BFP720H6327 RF Transistor, 45 GHz fT, NPN, SC-82A","metaDescription":"Infineon BFP720H6327 NPN RF transistor, 45 GHz transition frequency, 10.5–28.5 dB gain, 0.4 dB noise figure.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"10.5dB ~ 28.5dB","Package":"Bulk","Power - Max":"100mW","Mounting Type":"Surface Mount","Package / Case":"SC-82A, SOT-343","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"45GHz","Supplier Device Package":"PG-SOT343-4-2","Noise Figure (dB Typ @ f)":"0.4dB ~ 0.95dB @ 150MHz ~ 10GHz","Current - Collector (Ic) (Max)":"25mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 13mA, 3V","Voltage - Collector Emitter Breakdown (Max)":"4.7V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.18","priceTiers":[{"qty":1665,"price":"$0.18000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5e122ed5d74bc21f9fd6e41b04d8d195.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BFP720H6327/alternatives.json"},"ai":{"faq":[{"question":"What is BFP720H6327's listed gain?","answer":"The BFP720H6327 has a gain range of 10.5 dB to 28.5 dB, depending on bias and frequency. At the same time, its noise figure spans 0.4 dB at 150 MHz to 0.95 dB at 10 GHz."},{"question":"Can BFP720H6327 be used for 5G?","answer":"Yes. With a 45 GHz transition frequency and a noise figure of 0.95 dB at 10 GHz, the BFP720H6327 is well suited for low-noise amplifier stages in 5G sub-6 GHz and mmWave receivers, including massive-MIMO front-ends and small-cell base stations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFP720H6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFP720H6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}