{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFP620FH7764XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFP620FH7764XTSA1","canonicalUrl":"https://icboms.com/infineon/BFP620FH7764XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BFP620FH7764XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFP620FH7764XTSA1 NPN SiGe:C RF transistor, 65 GHz fT, 2.8 V Vceo, 80 mA Ic, 0.7 dB noise figure at 1.8 GHz, 4-TSFP surface-mount package.","salesMarkdown":"## 65 GHz SiGe:C NPN for L-band through C-band front-ends The Infineon BFP620FH7764XTSA1 is an NPN silicon-germanium carbon (SiGe:C) RF bipolar transistor designed for low-noise amplification and oscillator stages through 6 GHz and beyond. Its 65 GHz transition frequency and noise figure of 0.7 dB at 1.8 GHz make it a strong candidate for LNA and driver stages in cellular infrastructure, satellite receivers, and microwave backhaul radios. The 2.8 V collector-emitter breakdown and 80 mA maximum collector current suit it for low-voltage, moderate-current RF paths, typically in the first or second gain stage after the antenna filter. The noise figure is specified as 0.7 dB to 1.3 dB across 1.8 GHz to 6 GHz, meaning the part adds less than 1 dB of noise in the L-band and lower C-band — critical for preserving signal-to-noise ratio in a sensitive receiver. Gain drops from 21 dB at lower frequencies to 10 dB at the upper end of the range, which is typical for a single-stage transistor; plan for two stages or an external gain block if the system needs more than 10 dB at 6 GHz. ## Package and assembly — 4-TSFP with flat leads The part comes in a 4-SMD flat-lead package with the supplier device package designated 4-TSFP. The flat leads are solderable by standard reflow; the small footprint suits dense RF module layouts. No exposed thermal pad, so heat dissipation relies on the collector lead and board copper; the 185 mW maximum power is the thermal ceiling to observe in layout.","metaTitle":"Infineon BFP620FH7764XTSA1 NPN RF Transistor, 65 GHz fT","metaDescription":"Infineon BFP620FH7764XTSA1 NPN SiGe:C RF transistor. 65 GHz transition frequency, 0.7 dB noise figure at 1.8 GHz. 4-TSFP package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Gain":"21dB ~ 10dB","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"185mW","Mounting Type":"Surface Mount","Package / Case":"4-SMD, Flat Leads","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"65GHz","Supplier Device Package":"4-TSFP","Noise Figure (dB Typ @ f)":"0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz","Current - Collector (Ic) (Max)":"80mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"110 @ 50mA, 1.5V","Voltage - Collector Emitter Breakdown (Max)":"2.8V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.62","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.62000","currency":"USD"},{"qty":10,"price":"$0.52700","currency":"USD"},{"qty":25,"price":"$0.49160","currency":"USD"},{"qty":100,"price":"$0.39340","currency":"USD"},{"qty":250,"price":"$0.36528","currency":"USD"},{"qty":500,"price":"$0.30908","currency":"USD"},{"qty":1000,"price":"$0.23883","currency":"USD"},{"qty":3000,"price":"$0.21776","currency":"USD"},{"qty":6000,"price":"$0.20371","currency":"USD"},{"qty":15000,"price":"$0.18966","currency":"USD"},{"qty":30000,"price":"$0.17983","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/45f50be9627c798f01bc802ff69c089c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the operating frequency range of BFP620FH7764XTSA1?","answer":"The transition frequency is 65 GHz. The noise figure and gain are specified across 1.8 GHz to 6 GHz, which is the practical operating band for LNA and driver applications. The part can be used at higher frequencies with reduced gain."},{"question":"What are the alternatives for BFP620FH7764XTSA1?","answer":"The BFP640FH6327XTSA1 is a close functional peer with a 40 GHz fT, 23 dB gain, and similar noise figure (0.65 dB to 1.2 dB). The BFR181WH6327XTSA1 offers 8 GHz fT and 19 dB gain, suited for lower-frequency applications. The BFP193E6327HTSA1 provides 12 dB to 18 dB gain at 8 GHz fT with higher power handling (580 mW). None are pin-compatible drop-in replacements; verify the 4-TSFP footprint and bias conditions for each alternate."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFP620FH7764XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFP620FH7764XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}