{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BFP520FH6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BFP520FH6327","canonicalUrl":"https://icboms.com/infineon/BFP520FH6327","factsUrl":"https://icboms.com/api/mcp/products/BFP520FH6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BFP520FH6327 low-noise Si NPN RF transistor, 45 GHz fT, 22.5 dB gain, 0.95 dB NF at 1.8 GHz, 2.5 V Vceo, 50 mA Ic, 4-TSFP surface-mount package.","salesMarkdown":"## Low-noise Si NPN for receiver front-ends up to C-band The Infineon BFP520FH6327 is a low-noise silicon NPN bipolar RF transistor designed for small-signal amplification in wireless receiver front-ends, LNA stages, and oscillator buffer chains up to several gigahertz. Its 45 GHz transition frequency (fT) and 22.5 dB gain at 1.8 GHz make it a fit for GSM, WCDMA, LTE, and ISM-band LNA designs where noise figure and gain flatness drive the cascade budget. ## Noise figure and gain at 1.8 GHz — the LNA benchmark Noise figure is specified at 0.95 dB typical at 1.8 GHz, a common reference for cellular and ISM-band LNA evaluation. The 22.5 dB gain at that same frequency means a single stage can lift a -100 dBm signal to a level the mixer or ADC can resolve without a second gain block, provided the collector supply is held at or below 2.5 V. At 50 mA maximum collector current, the part is sized for low-to-medium current LNA and driver stages, not power amplification. ## Package and thermal handling for the 4-TSFP The 4-TSFP package (4-SMD with flat leads) is a small outline with a low parasitic footprint suited to RF layouts up to 45 GHz. The junction temperature rating of 150 °C and 120 mW maximum power dissipation mean the part can run warm in a dense RF section, but the thermal path relies on the PCB copper — no exposed pad. Keep the collector pad connected to a ground plane via short vias to pull heat out of the die.","metaTitle":"BFP520FH6327 NPN RF Transistor, 45 GHz fT, 22.5 dB Gain","metaDescription":"Infineon BFP520FH6327 Si NPN RF transistor, 45 GHz transition frequency, 22.5 dB gain, 0.95 dB NF at 1.8 GHz. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"22.5dB","Package":"Bulk","Power - Max":"120mW","Mounting Type":"Surface Mount","Package / Case":"4-SMD, Flat Leads","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"45GHz","Supplier Device Package":"4-TSFP","Noise Figure (dB Typ @ f)":"0.95dB @ 1.8GHz","Current - Collector (Ic) (Max)":"50mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 20mA, 2V","Voltage - Collector Emitter Breakdown (Max)":"2.5V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.15","stockQuantity":0,"priceTiers":[{"qty":2009,"price":"$0.15000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f6777463fb4719ee271434b307e7f9e8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gain and noise figure of BFP520FH6327 at 1.8 GHz?","answer":"Gain is 22.5 dB and noise figure is 0.95 dB typical at 1.8 GHz, making it a strong candidate for a single-stage LNA in cellular or ISM-band receivers."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BFP520FH6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BFP520FH6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}