{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BF776H6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BF776H6327","canonicalUrl":"https://icboms.com/infineon/BF776H6327","factsUrl":"https://icboms.com/api/mcp/products/BF776H6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BF776H6327 RF NPN transistor, 24 dB gain, 46 GHz transition frequency, 0.8 dB noise figure at 1.8 GHz, 50 mA max collector current, 4.7 V Vceo, SC-82A SOT-343 surface-mount package.","salesMarkdown":"## Package and footprint — SOT-343 for dense RF layouts The BF776H6327 comes in a 4-lead SOT-343 surface-mount package (Infineon code PG-SOT343-4). This is a standard RF transistor footprint suited for compact LNA modules on FR4 or ceramic substrates. ## DC bias and gain — 180 hFE at 30 mA With a minimum DC current gain (hFE) of 180 at 30 mA collector current and 3 V Vce, this transistor provides consistent gain across the bias point. Maximum collector current is 50 mA, and total power dissipation is rated at 200 mW — enough for a small-signal LNA but not a driver stage. The 150 °C junction temperature rating gives thermal headroom in compact enclosures.","metaTitle":"Infineon BF776H6327 RF NPN Transistor, 24 dB Gain, 46 GHz fT","metaDescription":"Infineon BF776H6327 RF NPN transistor, 24 dB gain, 0.8 dB noise figure at 1.8 GHz, 46 GHz transition frequency, SC-82A SOT-343 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Gain":"24dB","Package":"Bulk","Power - Max":"200mW","Mounting Type":"Surface Mount","Package / Case":"SC-82A, SOT-343","Transistor Type":"NPN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"46GHz","Supplier Device Package":"PG-SOT343-4","Noise Figure (dB Typ @ f)":"0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz","Current - Collector (Ic) (Max)":"50mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"180 @ 30mA, 3V","Voltage - Collector Emitter Breakdown (Max)":"4.7V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.16","priceTiers":[{"qty":1905,"price":"$0.16000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/be6faf03f73be01c77c38f33531b1b2e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BF776H6327/alternatives.json"},"ai":{"faq":[{"question":"What is the noise figure of BF776H6327?","answer":"The noise figure is 0.8 dB typical at 1.8 GHz, rising to 1.3 dB at 6 GHz. This sub-1 dB figure at cellular bands makes it suitable for sensitive receiver front-ends."},{"question":"What is the closest pin-compatible alternative to BF776H6327?","answer":"Within the same Infineon portfolio, the BF776 series shares the SOT-343 footprint and similar RF performance. For a direct pin-compatible second source, the BFP740H6327 from Infineon is a common cross-shop candidate with comparable gain and noise figure in the same package."},{"question":"What is BF776H6327's listed gain?","answer":"The BF776H6327 has a listed gain of 24 dB. This is the typical forward gain at the rated bias point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BF776H6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BF776H6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}