{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BDX53B","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"BDX53B","canonicalUrl":"https://icboms.com/stmicroelectronics/BDX53B","factsUrl":"https://icboms.com/api/mcp/products/BDX53B","rawCanonicalId":null},"summary":{"shortDescription":"BDX53B NPN Darlington transistor, 80 V VCEO, 8 A Ic, 60 W max, hFE 750 min at 3 A, TO-220-3, through hole, 150°C junction temperature.","salesMarkdown":"The BDX53B is an NPN Darlington transistor in a TO-220 through-hole package, rated for 80 V collector-emitter breakdown and 8 A continuous collector current. The Darlington pair gives a minimum DC current gain of 750 at 3 A collector current and 3 V VCE, so the base drive requirement stays low — about 12 mA base current to saturate the output at 3 A. That gain margin means a simple microcontroller GPIO through a resistor can drive it, no separate driver stage needed. Maximum power dissipation is 60 W, which sets the thermal budget. In a TO-220 package that figure assumes the device is bolted to an infinite heatsink — real-world derating depends on the thermal interface and ambient.","metaTitle":"BDX53B NPN Darlington Transistor, 80V 8A TO-220","metaDescription":"BDX53B NPN Darlington transistor, 80 V VCEO, 8 A Ic, 60 W max, hFE 750 min at 3 A. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","Power - Max":"60 W","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Transistor Type":"NPN - Darlington","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Supplier Device Package":"TO-220","Vce Saturation (Max) @ Ib, Ic":"2V @ 12mA, 3A","Current - Collector (Ic) (Max)":"8 A","Current - Collector Cutoff (Max)":"500µA","DC Current Gain (hFE) (Min) @ Ic, Vce":"750 @ 3A, 3V","Voltage - Collector Emitter Breakdown (Max)":"80 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3","priceTiers":[{"qty":1,"price":"$1.30000","currency":"USD"},{"qty":10,"price":"$1.16500","currency":"USD"},{"qty":100,"price":"$0.90860","currency":"USD"},{"qty":500,"price":"$0.75062","currency":"USD"},{"qty":1000,"price":"$0.65222","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/69a6435b8345ecd0b8cd6f4a7d9517a3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BDX53B/alternatives.json"},"ai":{"faq":[{"question":"Is BDX53B equivalent to TIP122?","answer":"Both are NPN Darlington transistors in TO-220 packages with similar voltage and current ratings. The TIP122 is rated 100 V VCEO and 5 A Ic, while the BDX53B is rated 80 V VCEO and 8 A Ic. The BDX53B carries a higher continuous current rating but a lower voltage rating. Pin-compatible in the same TO-220 footprint, but the voltage and current limits differ — check the load conditions before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/BDX53B","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/BDX53B when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}