{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR521E6327HTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR521E6327HTSA1","canonicalUrl":"https://icboms.com/infineon/BCR521E6327HTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR521E6327HTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR521E6327HTSA1 NPN pre-biased transistor, 500 mA collector current, 50 V Vce, 1 kΩ base and emitter-base resistors, 100 MHz transition frequency, SOT-23-3 package, 330 mW power dissipation.","salesMarkdown":"## Pre-biased NPN for digital output banks The Infineon BCR521E6327HTSA1 is a pre-biased NPN transistor in a SOT-23-3 package, integrating two 1 kΩ resistors (base and emitter-base) so that a single component replaces the transistor plus two external passives. With a 500 mA collector current rating and 50 V Vce breakdown, it handles typical low-side switching for relays, solenoids, indicator LEDs, and logic-level interface circuits in industrial controls and consumer appliances. The 100 MHz transition frequency keeps switching edges clean for PWM dimming or low-speed serial buses. ## Saturation voltage and drive margin Vce saturation is specified at 300 mV maximum with a 2.5 mA base current driving 50 mA collector current. The minimum DC current gain of 20 at 50 mA, 5 Vce confirms the pre-biased divider delivers enough base drive for the rated collector current. ## Last Buy — what it means for procurement The BCR521E6327HTSA1 carries a Last Buy lifecycle status. This is the final procurement window before the part is discontinued. Buyers should evaluate their remaining lifetime demand and place a last-time buy order to cover production needs. For new designs, a pin-compatible pre-biased NPN from the same SOT-23-3 footprint family should be qualified as the forward-looking alternative. ## Package and power dissipation Housed in the industry-standard SOT-23-3 (PG-SOT23) surface-mount package, the part dissipates up to 330 mW. The 100 nA maximum collector cutoff current ensures negligible leakage in off-state, important for battery-powered or low-standby designs.","metaTitle":"Infineon BCR521E6327HTSA1 NPN Pre-Biased Transistor, 500 mA","metaDescription":"Infineon BCR521E6327HTSA1 NPN pre-biased transistor in SOT-23-3. 500 mA Ic, 50 V Vce, 1 kΩ bias resistors. Last Buy status — confirm availability via RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"330 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Not For New Designs","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR521","Resistor - Base (R1)":"1 kOhms","Frequency - Transition":"100 MHz","Supplier Device Package":"PG-SOT23","Resistor - Emitter Base (R2)":"1 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 2.5mA, 50mA","Current - Collector (Ic) (Max)":"500 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"20 @ 50mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.3800","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/541eb0e8600615c6b53f5eff92ffb291.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for BCR521E6327HTSA1?","answer":"An official replacement is not listed in the available records. For new designs, select a pin-compatible pre-biased NPN transistor in SOT-23-3 from the same Infineon family, verifying the bias resistor values and current rating match your circuit requirements."},{"question":"What are the specifications of BCR521E6327HTSA1?","answer":"The BCR521E6327HTSA1 is an NPN pre-biased transistor with 500 mA maximum collector current, 50 V collector-emitter breakdown voltage, built-in 1 kΩ base and emitter-base resistors, 100 MHz transition frequency, 300 mV Vce saturation at 50 mA, minimum DC current gain of 20, 100 nA maximum cutoff current, and 330 mW power dissipation in a SOT-23-3 package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR521E6327HTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR521E6327HTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}