{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR35PNE6433HTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR35PNE6433HTMA1","canonicalUrl":"https://icboms.com/infineon/BCR35PNE6433HTMA1","factsUrl":"https://icboms.com/api/mcp/products/BCR35PNE6433HTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR35PNE6433HTMA1 dual pre-biased transistor, 1 NPN + 1 PNP, 50V VCEO, 100mA IC, 150MHz fT, R1=10kΩ R2=47kΩ, PG-SOT363-PO package, 250mW power dissipation.","salesMarkdown":"## What this dual pre-biased transistor does in your circuit The Infineon BCR35PNE6433HTMA1 is a dual pre-biased transistor array integrating one NPN and one PNP transistor with built-in bias resistors in a single PG-SOT363-PO package. Each transistor has a base resistor (R1) of 10kΩ and a base-emitter resistor (R2) of 47kΩ, eliminating the need for external bias components and saving board space in switching and driver applications. The BCR35PNE6433HTMA1 is marked obsolete by Infineon. No official replacement part number is listed by Infineon for this specific dual pre-biased transistor variant. The 50V VCEO breakdown voltage suits low-to-medium voltage switching up to 48V rails. The 100mA collector current rating covers typical load-driver and logic-level interface roles. The 150MHz transition frequency is adequate for switching applications up to a few MHz. The integrated 10kΩ base resistor and 47kΩ base-emitter resistor set the on-state base drive and off-state leakage path, so the part's switching threshold is fixed — verify it matches your input voltage swing. The 250mW total power dissipation limits continuous current at elevated ambient temperatures; derate for your operating conditions.","metaTitle":"Infineon BCR35PNE6433HTMA1 Dual Pre-Biased Transistor","metaDescription":"Infineon BCR35PNE6433HTMA1 dual NPN/PNP pre-biased transistor. 50V VCEO, 100mA IC, 150MHz fT. SOT-363. Obsolete.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Obsolete","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR35PN","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"150MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/12024c6ede9aeb6dac4cdbdc097bb64f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR35PNE6433HTMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for BCR35PNE6433HTMA1?","answer":"Infineon does not list an official replacement part number for this specific dual pre-biased transistor. For existing BOM lines, source through independent distribution against an RFQ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR35PNE6433HTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR35PNE6433HTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}