{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR198SH6827XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR198SH6827XTSA1","canonicalUrl":"https://icboms.com/infineon/BCR198SH6827XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR198SH6827XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR198SH6827XTSA1 dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 250mW Pd, 190MHz ft, 47kΩ base and emitter resistors, PG-SOT363-PO package, Tape & Reel.","salesMarkdown":"The Infineon BCR198SH6827XTSA1 is a dual PNP pre-biased transistor pair in a PG-SOT363-PO surface-mount package. Each transistor integrates a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2), eliminating two external resistors per channel and saving board area in low-power switching and interface circuits. Rated for a collector-emitter breakdown of 50V and a continuous collector current of 100mA, with a power dissipation ceiling of 250mW, it suits logic-level load drivers, relay and solenoid pre-drivers, and general-purpose inverter stages where a clean on/off switch is needed without biasing network design. ## 190MHz transition frequency — switching speed for the application With a transition frequency of 190MHz, this dual transistor can handle moderate-speed switching up to several megahertz, adequate for PWM pre-drive, level translation, and signal inversion in industrial control and consumer electronics. The pre-biased resistors set a fixed base drive — the 47kΩ R1 limits base current, while the 47kΩ R2 ensures a defined off-state — so the designer gets repeatable switching behaviour without trimming or external resistor selection. ## Saturation voltage and DC gain — driving the load cleanly At a base current of 500µA and collector current of 10mA, the Vce saturation is a maximum of 300mV, keeping conduction losses low in the on-state. Minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce confirms sufficient drive for typical logic-level loads. For a 100mA load, the 47kΩ base resistor limits base drive to roughly 60µA from a 3.3V logic rail, so the part is best suited to loads well below its 100mA maximum where the pre-biased ratio delivers a saturated switch. ## Last Buy — sourcing this part today Infineon has placed the BCR198SH6827XTSA1 in Last Buy status. This means the manufacturer has announced a final production window; after that date, no further factory orders are accepted.","metaTitle":"Infineon BCR198SH6827XTSA1 Dual PNP Pre-Biased Transistor","metaDescription":"Infineon BCR198SH6827XTSA1 dual PNP pre-biased transistor in SOT-363. 50V Vce, 100mA Ic, 250mW Pd, 190MHz ft.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Last Time Buy","Transistor Type":"2 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"47kOhms","Frequency - Transition":"190MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a076d8f34ecd766117d4342d668fd756.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for BCR198SH6827XTSA1?","answer":"A pin-compatible substitute would need to be evaluated from Infineon's pre-biased dual PNP transistor family with matching 47kΩ resistors and SOT-363 footprint."},{"question":"What are the specifications of BCR198SH6827XTSA1?","answer":"It is a dual PNP pre-biased transistor with 50V Vce breakdown, 100mA max collector current, 250mW power dissipation, 190MHz transition frequency, and integrated 47kΩ base and emitter resistors. Packaged in PG-SOT363-PO (SOT-363) on Tape & Reel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR198SH6827XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR198SH6827XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}