{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR183S","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR183S","canonicalUrl":"https://icboms.com/infineon/BCR183S","factsUrl":"https://icboms.com/api/mcp/products/BCR183S","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR183S, dual PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 10k base and emitter resistors, 200 MHz transition frequency, SOT-23-3 package, bulk.","salesMarkdown":"## Dual PNP pre-biased pair — one SOT-23, no external resistors The Infineon BCR183S packs two PNP transistors with integrated bias resistors into a single SOT-23-3 package. Each transistor has a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2), eliminating the need for external biasing components in switching and driver applications. Collector-emitter breakdown is rated at 50 V, and continuous collector current is 100 mA per transistor. Transition frequency is 200 MHz, adequate for low-speed switching up to a few megahertz. ## Built-in resistors simplify layout and BOM Saturation voltage is 300 mV maximum at 500 µA base current and 10 mA collector current, so the part can drive small relays, LEDs, or logic inputs without additional driver stages. DC current gain is a minimum of 30 at 5 mA collector current and 5 V VCE.","metaTitle":"Infineon BCR183S dual PNP pre-biased transistor, 50 V","metaDescription":"Infineon BCR183S dual PNP pre-biased transistor in SOT-23 package. 50 V VCEO, 100 mA IC, built-in 10k base and emitter resistors. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","Transistor Type":"2 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"200MHz","Supplier Device Package":"PG-SOT23-3-11","Resistor - Emitter Base (R2)":"10kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0300","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/527996a7134e1112ae19550998cf7815.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between BCR183S and BCR183W?","answer":"The BCR183S and BCR183W are both dual PNP pre-biased transistors from Infineon with identical electrical specifications (50 V VCEO, 100 mA IC, 10k resistors). The difference is the package: BCR183S comes in the SOT-23-3 (PG-SOT23-3-11) package, while BCR183W uses the SOT-323 package, which is smaller and has a different pin spacing. They are not pin-compatible."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR183S","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR183S when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}