{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR158WE6327HTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR158WE6327HTSA1","canonicalUrl":"https://icboms.com/infineon/BCR158WE6327HTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR158WE6327HTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR158WE6327HTSA1, PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 200 MHz ft, R1 2.2 kOhms, R2 47 kOhms, SC-70 SOT-323, surface mount, 250 mW.","salesMarkdown":"## What this PNP pre-biased transistor does The Infineon BCR158WE6327HTSA1 is a PNP pre-biased transistor in a SC-70 SOT-323 surface-mount package. It integrates a 2.2 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), which simplifies board layout by reducing external component count. With a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA, it suits low-power switching and interface circuits in industrial control, consumer electronics, and general-purpose load driving. The 200 MHz transition frequency supports moderate-speed switching applications. This part carries an obsolete product status. The 50 V collector-emitter breakdown sets the maximum rail voltage this transistor can handle — stay below that for reliable switching. The 100 mA continuous collector current defines the load it can drive; for inductive loads or higher inrush, derate accordingly. The 250 mW power dissipation limit is the package ceiling at 25 °C ambient; in a dense SMT layout or elevated temperature, the usable current drops. The 70 minimum hFE at 5 mA, 5 V ensures adequate gain for base-drive calculations in saturated switching.","metaTitle":"BCR158WE6327HTSA1 PNP Pre-Biased Transistor, 50 V, 100 mA","metaDescription":"Infineon BCR158WE6327HTSA1 PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 200 MHz ft, SC-70 SOT-323.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Obsolete","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR158","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"PG-SOT323","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/96ec13fd828bf1e1fca96d7b68fcf925.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the specs of BCR158WE6327HTSA1?","answer":"It is a PNP pre-biased transistor with 50 V Vce breakdown, 100 mA Ic max, 200 MHz transition frequency, 250 mW power dissipation, and a 70 minimum hFE at 5 mA, 5 V. It comes in an SC-70 SOT-323 surface-mount package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR158WE6327HTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR158WE6327HTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}