{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR158WE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR158WE6327","canonicalUrl":"https://icboms.com/infineon/BCR158WE6327","factsUrl":"https://icboms.com/api/mcp/products/BCR158WE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies BCR158WE6327 PNP pre-biased digital transistor, Automotive AEC-Q101, 50 V, 100 mA, 250 mW, SC-70 SOT-323, surface mount.","salesMarkdown":"The BCR158WE6327 is a PNP pre-biased transistor from Infineon Technologies, qualified to AEC-Q101 for automotive applications. It integrates two bias resistors — 2.2 kΩ in the base leg (R1) and 47 kΩ from emitter to base (R2) — which eliminate the need for external resistor pairs in switching and driver circuits. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a maximum power dissipation of 250 mW. The 200 MHz transition frequency keeps switching edges clean in low-speed gate drive and logic-level translation up to a few hundred kilohertz. Housed in the PG-SOT323-3-1 package (SC-70, SOT-323 footprint), it occupies about 2.0 × 2.1 mm on the board — a fit for space-constrained automotive modules like interior lighting controllers or seat-position sensors. ## DC gain and saturation — what the numbers mean for the BOM In a saturated switch, the base drive from the integrated 2.2 kΩ resistor must keep the transistor in hard saturation (Vce(sat) ≤ 300 mV at Ib = 500 µA, Ic = 10 mA) to minimise conduction loss. The 100 nA collector cutoff current (ICBO) at 25 °C is the leakage floor. At 85 °C ambient — typical under-hood — expect it to rise roughly an order of magnitude per 25 °C junction increase, so budget a few microamps of leakage in high-impedance pull-up paths.","metaTitle":"Infineon BCR158WE6327 PNP Pre-Biased Transistor, AEC-Q101","metaDescription":"Infineon BCR158WE6327 PNP pre-biased transistor, 50 V, 100 mA, 250 mW, AEC-Q101 automotive grade. Active production. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"Automotive, AEC-Q101","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Active","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"PG-SOT323-3-1","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5ec095a46eb42bbf32c5d041f26f6d67.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR158WE6327/alternatives.json"},"ai":{"faq":[{"question":"How do I get current pricing and availability for BCR158WE6327?","answer":"Submit an RFQ against your BOM quantity."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR158WE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR158WE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}