{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR158W","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR158W","canonicalUrl":"https://icboms.com/infineon/BCR158W","factsUrl":"https://icboms.com/api/mcp/products/BCR158W","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR158W PNP pre-biased transistor, SC-70 / SOT-323 package, 50 V collector-emitter breakdown, 100 mA collector current, 250 mW power dissipation, 200 MHz transition frequency.","salesMarkdown":"## PNP pre-biased transistor with integrated bias resistors The Infineon BCR158W is a PNP pre-biased transistor in a compact SC-70 / SOT-323 package. It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2), eliminating the need for external biasing components in digital switching applications. The device is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA, with a maximum power dissipation of 250 mW. The 50 V VCEO breakdown gives headroom for switching 24 V or 48 V industrial loads, while the 100 mA continuous collector current handles small relays, LEDs, or logic-level interface signals. The 250 mW power limit in the SC-70 package means the device is suited for low-power auxiliary switching rather than output drivers — keep the load current and duty cycle within the thermal budget. The 200 MHz transition frequency is adequate for general-purpose switching up to several megahertz, but not for RF output stages.","metaTitle":"BCR158W PNP Pre-Biased Transistor, 50 V, 100 mA, SC-70","metaDescription":"BCR158W PNP pre-biased transistor with 2.2 kΩ base resistor and 47 kΩ base-emitter resistor. 50 V VCEO, 100 mA IC, 250 mW power dissipation.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Active","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"PG-SOT323-3-1","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3120d581596426422fb2c895e63932e0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the base resistor value for BCR158W?","answer":"The integrated base resistor (R1) is 2.2 kΩ, and the base-emitter resistor (R2) is 47 kΩ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR158W","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR158W when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}