{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR135TE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR135TE6327","canonicalUrl":"https://icboms.com/infineon/BCR135TE6327","factsUrl":"https://icboms.com/api/mcp/products/BCR135TE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR135TE6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz fT, integrated 10 kΩ base resistor and 47 kΩ base-emitter resistor, PG-SOT23-3-11 package, Bulk.","salesMarkdown":"## Pre-biased NPN – what it saves on the BOM The Infineon BCR135TE6327 is an NPN pre-biased transistor in a PG-SOT23-3-11 package. It integrates a 10 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2) on-chip, eliminating two external passives per transistor from the board. The collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA and a transition frequency of 150 MHz. Maximum power dissipation is 200 mW. In a SOT-23-3 footprint, that limits continuous collector current at higher VCE — for a 5 V rail, 40 mA continuous is about the practical ceiling before junction temperature becomes the constraint. The 300 mV saturation voltage at 500 µA base drive and 10 mA collector current gives a clean low-side switch with minimal voltage drop.","metaTitle":"BCR135TE6327 NPN Pre-Biased Transistor, 50 V, 100 mA","metaDescription":"BCR135TE6327 NPN pre-biased transistor by Infineon. 50 V VCEO, 100 mA Ic, 150 MHz fT. Integrated 10 kΩ base / 47 kΩ emitter resistors. SOT-23-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"10 kOhms","Frequency - Transition":"150 MHz","Supplier Device Package":"PG-SOT23-3-11","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7f255a3a83b0754ba32dc89946de9b1c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to BCR135TE6327 in this component family?","answer":"Within the same Infineon pre-biased NPN family, the BCR135 series shares the same SOT-23-3 footprint and 50 V / 100 mA ratings. The differentiating factor is the internal resistor ratio — the BCR135 uses 10 kΩ base / 47 kΩ base-emitter. A direct pin-compatible alternative would need the same resistor values; parts with different R1/R2 ratios will shift the on/off threshold and saturation drive."},{"question":"What is BCR135TE6327's listed power dissipation?","answer":"The maximum power dissipation is 200 mW. In a SOT-23-3 package this limits continuous collector current at higher VCE — for a 5 V rail, 40 mA continuous is a practical ceiling before junction temperature becomes the constraint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR135TE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR135TE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}