{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR133WH6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR133WH6327","canonicalUrl":"https://icboms.com/infineon/BCR133WH6327","factsUrl":"https://icboms.com/api/mcp/products/BCR133WH6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR133WH6327 NPN Pre-Biased Transistor, 100 mA Ic, 50 V Vce, 10 kΩ R1/R2, 130 MHz ft, SC-70 (SOT-323), Surface Mount, 250 mW.","salesMarkdown":"## Pre-biased NPN in a tiny SC-70 package The Infineon BCR133WH6327 is an NPN pre-biased transistor — it integrates both a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2) inside the same SC-70 (SOT-323) package. That means two external resistors disappear from the BOM and the board. It is rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, with a transition frequency of 130 MHz. The 250 mW power dissipation limit suits low-power switching applications like relay drivers, LED indicators, and logic-level interfacing in compact consumer or industrial PCBs.","metaTitle":"BCR133WH6327 NPN Pre-Biased Transistor, 100 mA, 50 V, SC-70","metaDescription":"BCR133WH6327 NPN pre-biased transistor in SC-70 (SOT-323) package. 100 mA collector current, 50 V breakdown, 10 kΩ base resistor.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Active","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"10 kOhms","Frequency - Transition":"130 MHz","Supplier Device Package":"PG-SOT323-3-1","Resistor - Emitter Base (R2)":"10 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/e1bb27f40f72ef75a7e74caeff43f359.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the base resistor value in BCR133WH6327?","answer":"The integrated base resistor (R1) is 10 kΩ, and the emitter-base resistor (R2) is also 10 kΩ. This pre-biased configuration eliminates two external components."},{"question":"What is the maximum collector current of BCR133WH6327?","answer":"The maximum collector current (Ic) is 100 mA. This sets the upper load limit for switching applications such as driving small relays, LEDs, or logic inputs."},{"question":"What are the alternatives for BCR133WH6327?","answer":"Pin-compatible alternatives include other Infineon pre-biased NPN transistors in the same SC-70 package with different resistor ratios — for example, the BCR133WH6327 uses 10 kΩ / 10 kΩ; a sibling with 10 kΩ / 47 kΩ (BCR135WH6327) or 2.2 kΩ / 10 kΩ (BCR108WH6327) shifts the base drive threshold. Check the resistor divider that matches your saturation voltage requirement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR133WH6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR133WH6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}