{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR119WH6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR119WH6327","canonicalUrl":"https://icboms.com/infineon/BCR119WH6327","factsUrl":"https://icboms.com/api/mcp/products/BCR119WH6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR119WH6327 NPN Pre-Biased Transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base resistor, 150 MHz, 250 mW, SC-70/SOT-323 package, surface mount, active.","salesMarkdown":"## Pre-biased NPN in a compact SOT-323 The Infineon BCR119WH6327 is an NPN pre-biased transistor — a digital transistor with a 4.7 kΩ base resistor integrated on-chip. It's designed to replace the discrete resistor + BJT pair in low-current switching and driver stages, saving board space and reducing pick-and-place cost. ## Switching performance and bias design The integrated base resistor (4.7 kΩ) sets the base current for a given drive voltage, simplifying the input stage. Minimum DC current gain is 120 at 5 mA, 5 V, ensuring adequate drive for loads up to 100 mA. The 150 MHz transition frequency supports switching in the low-MHz range. Saturation voltage is 300 mV max at 500 µA base, 10 mA collector — low enough to keep dissipation minimal in saturated switches. Collector cutoff current is just 100 nA, useful in battery-operated circuits where off-state leakage matters. Maximum power dissipation is 250 mW for the SOT-323 package. In a 100 mA switching application, ensure the collector-emitter voltage drop times current stays well under this limit, or derate for ambient temperature above 25 °C.","metaTitle":"Infineon BCR119WH6327 NPN Pre-Biased Transistor, 50 V","metaDescription":"Infineon BCR119WH6327 NPN pre-biased transistor in SC-70 (SOT-323) package. 50 V, 100 mA, 4.7 kΩ base resistor, 150 MHz. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Active","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7 kOhms","Frequency - Transition":"150 MHz","Supplier Device Package":"PG-SOT323-3-1","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/93792b8ff765f09f4b31d4f9f5ee8d91.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR119WH6327 obsolete or active?","answer":"BCR119WH6327 is listed as active. No discontinuation or last-time-buy has been announced by Infineon."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR119WH6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR119WH6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}