{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR119S","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR119S","canonicalUrl":"https://icboms.com/infineon/BCR119S","factsUrl":"https://icboms.com/api/mcp/products/BCR119S","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR119S dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 150MHz ft, PG-SOT363-6-1 package, active lifecycle.","salesMarkdown":"## Dual pre-biased NPN in a SOT-363 The Infineon BCR119S packs two NPN pre-biased transistors into a single PG-SOT363-6-1 package (6-VSSOP / SC-88 / SOT-363). Each transistor integrates a 4.7 kΩ base resistor (R1), eliminating two external resistors per channel and cutting placement cost on high-density boards. Collector-emitter breakdown is rated at 50 V, collector current at 100 mA maximum, with a transition frequency of 150 MHz — enough for switching loads like relay coils, LED indicators, or level translation up to a few megahertz. ## 50 V / 100 mA — what it handles The 50 V Vce(max) and 100 mA Ic(max) define the load envelope. DC current gain (hFE) minimum is 120 at 5 mA, 5 V. ## Active lifecycle — no LTB worry No last-time-buy clock is ticking.","metaTitle":"Infineon BCR119S Dual NPN Pre-Biased Transistor, 50V, 100mA","metaDescription":"BCR119S dual NPN pre-biased transistor from Infineon in SOT-363. 50V Vce, 100mA Ic, 150MHz ft. Active status, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Active","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"150MHz","Supplier Device Package":"PG-SOT363-6-1","Resistor - Emitter Base (R2)":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/93792b8ff765f09f4b31d4f9f5ee8d91.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR119S/alternatives.json"},"ai":{"faq":[{"question":"What is the BCR119S transistor?","answer":"The BCR119S is a dual NPN pre-biased transistor from Infineon, containing two transistors each with a 4.7 kΩ base resistor, in a surface-mount SOT-363 package. It is rated for 50 V collector-emitter breakdown and 100 mA collector current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR119S","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR119S when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}