{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR119S","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR119S","canonicalUrl":"https://icboms.com/infineon/BCR119S","factsUrl":"https://icboms.com/api/mcp/products/BCR119S","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR119S dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 150MHz ft, PG-SOT363-6-1 package, active lifecycle.","salesMarkdown":"## Dual pre-biased NPN in a SOT-363 The Infineon BCR119S packs two NPN pre-biased transistors into a single PG-SOT363-6-1 package (6-VSSOP / SC-88 / SOT-363). Each transistor integrates a 4.7 kΩ base resistor (R1), eliminating two external resistors per channel and cutting placement cost on high-density boards. Collector-emitter breakdown is rated at 50 V, collector current at 100 mA maximum, with a transition frequency of 150 MHz — enough for switching loads like relay coils, LED indicators, or level translation up to a few megahertz. ## 50 V / 100 mA — what it handles The 50 V Vce(max) and 100 mA Ic(max) define the load envelope. Saturation voltage is 300 mV at 500 µA base drive and 10 mA collector current. DC current gain (hFE) minimum is 120 at 5 mA, 5 V. ## Active lifecycle — no LTB worry No last-time-buy clock is ticking.","metaTitle":"Infineon BCR119S Dual NPN Pre-Biased Transistor, 50V, 100mA","metaDescription":"BCR119S dual NPN pre-biased transistor from Infineon in SOT-363. 50V Vce, 100mA Ic, 150MHz ft. Active status, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Active","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"150MHz","Supplier Device Package":"PG-SOT363-6-1","Resistor - Emitter Base (R2)":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/93792b8ff765f09f4b31d4f9f5ee8d91.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the BCR119S transistor?","answer":"The BCR119S is a dual NPN pre-biased transistor from Infineon, containing two transistors each with a 4.7 kΩ base resistor, in a surface-mount SOT-363 package. It is rated for 50 V collector-emitter breakdown and 100 mA collector current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR119S","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR119S when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}