{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR116SE6327BTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR116SE6327BTSA1","canonicalUrl":"https://icboms.com/infineon/BCR116SE6327BTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR116SE6327BTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR116SE6327BTSA1, 2 NPN Pre-Biased (Dual) transistor, 50V Vce, 100mA Ic, 250mW max, 150MHz transition frequency, PG-SOT363-PO package.","salesMarkdown":"## Dual pre-biased NPN in a SOT-363 footprint The Infineon BCR116SE6327BTSA1 is a dual NPN digital transistor — two pre-biased transistors in a single PG-SOT363-PO package, each with integrated bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ. The 250 mW power dissipation ceiling is the total for both transistors in the SOT-363 package — not per channel. If each transistor switches 50 mA at a Vce(sat) of 300 mV, the per-transistor dissipation is about 15 mW, leaving plenty of headroom. But driving both transistors at 100 mA each with a Vce(sat) of 300 mV pushes the total to 60 mW, still well under the limit. The real constraint is the thermal resistance of the small plastic package; in a high-ambient environment (above 85 °C), derating should follow the typical SOT-363 curve. The 100 mA Ic(max) is a continuous rating — pulsed operation can go higher, but the 250 mW ceiling governs the safe area.","metaTitle":"BCR116SE6327BTSA1 2 NPN Pre-Biased Dual Transistor, Obsolete","metaDescription":"Infineon BCR116SE6327BTSA1 dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 250mW max.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Obsolete","Transistor Type":"2 NPN - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR116S","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"150MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR116SE6327BTSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for BCR116SE6327BTSA1?","answer":"For a pin-compatible dual pre-biased NPN, check the BCR116S base product family — but confirm the exact resistor values (R1 = 4.7 kΩ, R2 = 47 kΩ) and package (PG-SOT363-PO) against any candidate."},{"question":"What are the specifications of BCR116SE6327BTSA1?","answer":"It is a dual NPN pre-biased transistor with R1 = 4.7 kΩ, R2 = 47 kΩ, Vce breakdown of 50 V, Ic(max) of 100 mA, Vce(sat) of 300 mV at 500 µA base and 10 mA collector, hFE(min) of 70 at 5 mA and 5 V, transition frequency of 150 MHz, and maximum power dissipation of 250 mW. Package is PG-SOT363-PO."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR116SE6327BTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR116SE6327BTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}