{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR112E6327HTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR112E6327HTSA1","canonicalUrl":"https://icboms.com/infineon/BCR112E6327HTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR112E6327HTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR112E6327HTSA1 NPN pre-biased transistor, 100 mA collector current, 50 V VCEO, 140 MHz fT, integrated 4.7 kOhm bias resistors, PG-SOT23 package.","salesMarkdown":"## What this pre-biased NPN does on your board It integrates two 4.7 kOhm resistors — one in series with the base (R1) and one between base and emitter (R2) — so you can drive it directly from a logic output or microcontroller GPIO without adding external bias components. This saves two resistors per transistor and shrinks the placement footprint to a single three-pin SOT-23. ## Key ratings for the design decision Collector current is rated 100 mA maximum, with a collector-emitter breakdown voltage of 50 V. The 140 MHz transition frequency means it handles switching up into the low-MHz range — fine for relay drivers, LED switching, or level translation at typical logic speeds. Collector cutoff leakage is 100 nA maximum, negligible for most loads. ## Lifecycle status — last buy window Infineon has announced end-of-life and is accepting final orders through a defined last-time-buy window.","metaTitle":"Infineon BCR112E6327HTSA1 NPN Pre-Biased Transistor, 100 mA","metaDescription":"Infineon BCR112E6327HTSA1 NPN pre-biased transistor. 100 mA collector current, 50 V VCEO, 140 MHz transition frequency. Last buy status.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Last Time Buy","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR112","Resistor - Base (R1)":"4.7 kOhms","Frequency - Transition":"140 MHz","Supplier Device Package":"PG-SOT23","Resistor - Emitter Base (R2)":"4.7 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"20 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.3600","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR112E6327HTSA1/alternatives.json"},"ai":{"faq":[{"question":"Is BCR112E6327HTSA1 obsolete?","answer":"BCR112E6327HTSA1 has a Last Buy lifecycle status. It is not yet fully discontinued — Infineon is still accepting final orders through a last-time-buy window — but production will end after that window closes. Plan your procurement accordingly."},{"question":"What is BCR112E6327HTSA1's power dissipation rating?","answer":"The maximum power dissipation is 200 mW for the device in the PG-SOT23 package. This limits the continuous collector current and switching duty cycle you can sustain without exceeding the junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR112E6327HTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR112E6327HTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}