{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR10PNH6727XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR10PNH6727XTSA1","canonicalUrl":"https://icboms.com/infineon/BCR10PNH6727XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR10PNH6727XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR10PNH6727XTSA1 — dual NPN/PNP pre-biased transistor array, 50V Vce, 100mA Ic, R1=R2=10kΩ, 130MHz ft, PG-SOT363-PO package, last-time-buy.","salesMarkdown":"## Dual pre-biased transistor in SOT-363 — what it is The Infineon BCR10PNH6727XTSA1 packs one NPN and one PNP pre-biased transistor into a single PG-SOT363-PO package, each with integrated 10 kΩ base-emitter and base resistors. This eliminates two external bias resistors per transistor, reducing pick-and-place cost and board area in low-power switching and driver stages. Each transistor is rated for a 50 V collector-emitter breakdown and 100 mA continuous collector current, with a minimum DC current gain of 30 at 5 mA, 5 V. The 130 MHz transition frequency supports switching applications up to the low-MHz range. Maximum power dissipation is 250 mW for the combined package — budget accordingly when both transistors are conducting simultaneously. This part is officially in last-time-buy (LTB) status per the manufacturer. That means Infineon has stopped production and the final orders have closed through the factory channel. The remaining inventory is in independent distribution, and once it is gone there is no new supply. For a production BOM that already qualifies this transistor, the window to secure lifetime-buy quantities is closing. If you need a second source or a pin-compatible drop-in, the BCR10PN family shares the same SOT-363 footprint and internal bias resistor values — but verify the specific suffix (e.g., BCR10PNH6327XTSA1) against your tape-and-reel and packing requirements before committing. ## Package and mounting Supplied in Tape & Reel (TR) for automated surface-mount assembly. The PG-SOT363-PO package is a standard 6-lead SOT-363 footprint with 0.65 mm lead pitch. No exposed thermal pad — dissipation is through the leads and board copper.","metaTitle":"Infineon BCR10PNH6727XTSA1 Dual Pre-Biased Transistor","metaDescription":"Infineon BCR10PNH6727XTSA1 dual NPN/PNP pre-biased transistor in SOT-363. 50V Vce, 100mA Ic, 130MHz ft. RFQ for availability.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Not For New Designs","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR10","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"130MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"10kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0856","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a613f232d8204b51789d3e442eb91bb6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR10PNH6727XTSA1 obsolete or last time buy?","answer":"Yes, this part is in last-time-buy (LTB) status. Infineon has ended production; remaining stock is in independent distribution. No new factory orders are being accepted."},{"question":"What is the direct replacement for BCR10PNH6727XTSA1?","answer":"There is no single pin-compatible drop-in replacement listed. Other BCR10PN suffix variants (e.g., BCR10PNH6327XTSA1) share the same die and bias resistor values but have different packing or tape specifications. Check the suffix against your assembly requirements before substituting."},{"question":"What are the specifications of BCR10PNH6727XTSA1 (R1, R2, Ic)?","answer":"Each transistor has integrated bias resistors R1 = 10 kΩ (base) and R2 = 10 kΩ (base-emitter). Maximum collector current is 100 mA, collector-emitter breakdown is 50 V, and minimum DC current gain is 30 at 5 mA, 5 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR10PNH6727XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR10PNH6727XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}