{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR10PNE6327BTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR10PNE6327BTSA1","canonicalUrl":"https://icboms.com/infineon/BCR10PNE6327BTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR10PNE6327BTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR10PNE6327BTSA1 dual pre-biased transistor, 1 NPN + 1 PNP, 50V Vce, 100mA Ic, 130MHz fT, PG-SOT363-PO package.","salesMarkdown":"## Dual pre-biased transistor — 50 V, 100 mA, integrated 10 kΩ resistors The Infineon BCR10PNE6327BTSA1 packs one NPN and one PNP pre-biased transistor in a single PG-SOT363-PO surface-mount package, each with 10 kΩ base and 10 kΩ emitter-base resistors built in. The 50 V collector-emitter breakdown voltage and 100 mA continuous collector current cover low-side switching and level-shifting in 5 V to 24 V industrial logic rails. The 130 MHz transition frequency keeps switching edges clean for PWM up to a few megahertz. ## Obsolete — sourcing through independent distribution Infineon has marked the BCR10PNE6327BTSA1 as obsolete. ## 250 mW power dissipation — thermal budget in SOT-363 The 250 mW total power limit (both transistors combined) sets the thermal ceiling in the compact SOT-363 footprint. For continuous operation near 100 mA on both channels, derating is required above 25 °C ambient. The PG-SOT363-PO package has a small thermal pad; board copper area helps pull heat out.","metaTitle":"Infineon BCR10PNE6327BTSA1 Dual Pre-Biased Transistor, 50V","metaDescription":"Infineon BCR10PNE6327BTSA1 dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 130MHz fT.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Obsolete","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR10PN","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"130MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"10kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a613f232d8204b51789d3e442eb91bb6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR10PNE6327BTSA1 obsolete?","answer":"Yes, Infineon lists the BCR10PNE6327BTSA1 as obsolete. It is no longer in production and must be sourced through independent channels or replaced with a pin-compatible alternative."},{"question":"What is the replacement for BCR10PNE6327BTSA1?","answer":"Infineon has not published an official successor for this part. A pin-compatible dual pre-biased transistor from another manufacturer, or a discrete NPN/PNP pair with external 10 kΩ resistors, would serve as a functional replacement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR10PNE6327BTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR10PNE6327BTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}