{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR10PNB6327XT","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR10PNB6327XT","canonicalUrl":"https://icboms.com/infineon/BCR10PNB6327XT","factsUrl":"https://icboms.com/api/mcp/products/BCR10PNB6327XT","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR10PNB6327XT, dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 130MHz fT, 10kΩ base and emitter resistors, SOT-363 package, 250mW power dissipation.","salesMarkdown":"## One package, two transistors, no external bias resistors The Infineon BCR10PNB6327XT packs one NPN and one PNP pre-biased transistor into a single SOT-363 package. Each transistor has a 10kΩ resistor in series with the base and another 10kΩ resistor between base and emitter, so you don't need to add those resistors on the board. The collector-emitter breakdown is rated at 50V, and each side can handle up to 100mA continuous collector current. ## 130 MHz transition frequency — fast enough for most switching and level-shifting With a transition frequency of 130MHz, this dual transistor handles switching applications up into the low-MHz range comfortably. The 300mV saturation voltage at 500µA base current and 10mA collector current means low on-state losses in digital logic level shifters, relay drivers, and small-signal inverter stages. ## Active lifecycle — no end-of-life concern for new designs No last-time-buy or obsolescence notice to plan around for ongoing builds or new board spins.","metaTitle":"Infineon BCR10PNB6327XT Dual Pre-Biased Transistor","metaDescription":"Infineon BCR10PNB6327XT dual NPN/PNP pre-biased transistor in SOT-363. 50V Vce, 100mA Ic, 130MHz fT, built-in 10kΩ resistors.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR10","Resistor - Base (R1)":"10kOhms","Frequency - Transition":"130MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"10kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a613f232d8204b51789d3e442eb91bb6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does BCR10PNB6327XT have built-in resistors?","answer":"Yes. Each transistor has a 10kΩ base resistor (R1) and a 10kΩ base-emitter resistor (R2) integrated on-chip. You do not need to add external bias resistors."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR10PNB6327XT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR10PNB6327XT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}