{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR108E6433HTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR108E6433HTMA1","canonicalUrl":"https://icboms.com/infineon/BCR108E6433HTMA1","factsUrl":"https://icboms.com/api/mcp/products/BCR108E6433HTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR108E6433HTMA1 NPN pre-biased transistor, 100 mA collector current, 50 V Vce breakdown, 170 MHz transition frequency, integrated 2.2 kΩ base resistor and 47 kΩ emitter-base resistor, SOT-23-3 package, 200 mW power dissipation, NRND lifecycle.","salesMarkdown":"## NPN pre-biased transistor with integrated bias resistors The Infineon BCR108E6433HTMA1 is an NPN pre-biased transistor in a SOT-23-3 package, integrating a 2.2 kΩ base resistor and a 47 kΩ emitter-base resistor. It switches loads up to 100 mA collector current at a 50 V collector-emitter breakdown voltage, with a 170 MHz transition frequency. The built-in bias network eliminates two external resistors per channel, saving board area and reducing pick-and-place cost in high-volume digital switching, relay drivers, and logic-level interface circuits. New designs should evaluate a pin-compatible pre-biased NPN transistor in the same SOT-23-3 footprint to avoid a future last-time-buy event. The 100 mA maximum collector current and 200 mW power dissipation limit this part to low-current switching — think driving a small relay coil, an LED string, or a logic-level buffer. The 100 nA collector cutoff leakage suits battery-powered or high-impedance nodes where off-state current matters. ## SOT-23-3 — rework-friendly footprint The SOT-23-3 package is one of the easiest small-signal packages to rework by hand. With a hot-air station at 300°C and a fine tip, you can lift the part without lifting the pad, provided the board has adequate copper relief. The PG-SOT23 supplier device package is electrically identical to the standard SOT-23-3 footprint.","metaTitle":"Infineon BCR108E6433HTMA1 NPN Pre-Biased Transistor, 100 mA","metaDescription":"Infineon BCR108E6433HTMA1 NPN pre-biased transistor, 100 mA Ic, 50 V Vce, 170 MHz fT, 2.2 kΩ base resistor, 47 kΩ emitter-base resistor, SOT-23-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Not For New Designs","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR108","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"170 MHz","Supplier Device Package":"PG-SOT23","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0431","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ca1544aaf2aafd2d035881c4e6e72774.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BCR108E6433HTMA1/alternatives.json"},"ai":{"faq":[{"question":"Is BCR108E6433HTMA1 obsolete or NRND?","answer":"It is not recommended for new designs, but existing production can source it through independent distribution against an RFQ."},{"question":"What is the closest pin-compatible alternative to BCR108E6433HTMA1?","answer":"A pin-compatible alternative is another NPN pre-biased transistor in SOT-23-3 with the same 2.2 kΩ base resistor and 47 kΩ emitter-base resistor values. The Infineon BCR108 series includes multiple variants with different bias resistor combinations; confirm the resistor values match your design before substituting."},{"question":"What is BCR108E6433HTMA1's power dissipation rating?","answer":"The maximum power dissipation is 200 mW. This limits the continuous collector current at higher voltages — at 50 V the practical current is well below 100 mA to stay within the power budget."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR108E6433HTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR108E6433HTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}