{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR08PNE6327BTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR08PNE6327BTSA1","canonicalUrl":"https://icboms.com/infineon/BCR08PNE6327BTSA1","factsUrl":"https://icboms.com/api/mcp/products/BCR08PNE6327BTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR08PNE6327BTSA1 dual pre-biased transistor array, 1 NPN + 1 PNP, 50V VCEO, 100mA IC, 170MHz fT, 250mW, SOT-363 package.","salesMarkdown":"## Dual pre-biased transistor in SOT-363 The Infineon BCR08PNE6327BTSA1 integrates one NPN and one PNP pre-biased transistor in a single SOT-363 package, each with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ). Infineon lists the BCR08PNE6327BTSA1 as obsolete. For BOM lines already qualified to this dual-transistor footprint, the only supply path is the surplus and broker market. If you are evaluating a new design, consider qualifying an active alternate while existing stock is still findable. ## Transition frequency and gain headroom With a transition frequency of 170 MHz and minimum DC current gain of 70 at 5 mA / 5 V, the BCR08PNE6327BTSA1 handles switching up to low-MHz ranges and provides consistent drive for loads in the tens of milliamps.","metaTitle":"BCR08PNE6327BTSA1 dual NPN/PNP pre-biased transistor","metaDescription":"Infineon BCR08PNE6327BTSA1 dual pre-biased transistor array: 1 NPN + 1 PNP, 50V VCEO, 100mA IC, 170MHz fT, SOT-363.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR) Cut Tape (CT)","Power - Max":"250mW","Mounting Type":"Surface Mount","Package / Case":"6-VSSOP, SC-88, SOT-363","Product Status":"Obsolete","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Base Product Number":"BCR08","Resistor - Base (R1)":"2.2kOhms","Frequency - Transition":"170MHz","Supplier Device Package":"PG-SOT363-PO","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"-","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.3900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9544ace020169c4d37b2a49dc5055f85.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR08PNE6327BTSA1 obsolete?","answer":"Yes, Infineon has marked the BCR08PNE6327BTSA1 as obsolete. No official replacement order code has been published. For new designs, plan to qualify an active alternate."},{"question":"What are the specifications of BCR08PNE6327BTSA1?","answer":"It is a dual pre-biased transistor array with one NPN and one PNP in a SOT-363 package. Key ratings: 50 V VCEO, 100 mA IC max, 250 mW power dissipation, 170 MHz transition frequency, minimum hFE of 70 at 5 mA / 5 V, and built-in base resistor R1 of 2.2 kΩ with emitter-base resistor R2 of 47 kΩ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR08PNE6327BTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR08PNE6327BTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}