{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR 158T E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR-158T-E6327","canonicalUrl":"https://icboms.com/infineon/BCR-158T-E6327","factsUrl":"https://icboms.com/api/mcp/products/BCR%20158T%20E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR 158T E6327 PNP pre-biased digital transistor, 100 mA collector current, 50 V Vce, 200 MHz transition frequency, SC-75 SOT-416 surface-mount package.","salesMarkdown":"## PNP pre-biased transistor with integrated bias network The BCR 158T E6327: The Infineon BCR 158T is a PNP pre-biased digital transistor in a SC-75 (SOT-416) surface-mount package. It integrates a 2.2 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2) on-chip, eliminating the need for two external resistors per switching node. Rated for 100 mA continuous collector current and 50 V collector-emitter breakdown, with a transition frequency of 200 MHz. ## BOM consolidation in a 250 mW package The built-in resistor divider sets the base drive for a fixed gain of 70 minimum at 5 mA, 5 V. This simplifies the switching design for loads up to 100 mA — the transistor saturates at 300 mV with 500 µA base drive and 10 mA collector current. Maximum power dissipation is 250 mW in the SC-75 body. The small footprint (PG-SC75-3D) suits dense PCB layouts where a discrete resistor-transistor pair would consume roughly double the area.","metaTitle":"BCR 158T E6327 PNP Pre-Biased Transistor, 200 MHz, SC-75","metaDescription":"Infineon BCR 158T E6327 PNP pre-biased transistor with 2.2 kOhm base resistor, 47 kOhm emitter-base resistor. 100 mA Ic, 50 V Vce, 200 MHz ft.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-75, SOT-416","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR 158","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"PG-SC75-3D","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.1900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/51a51bf3d2c627220428bb3a38619b98.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum power dissipation of BCR 158T E6327?","answer":"The maximum power dissipation is 250 mW. In a typical switching application at 100 mA and 300 mV Vce(sat), the conduction loss is about 30 mW, leaving ample margin for the bias network losses."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR-158T-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR-158T-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}