{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR 114F E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR-114F-E6327","canonicalUrl":"https://icboms.com/infineon/BCR-114F-E6327","factsUrl":"https://icboms.com/api/mcp/products/BCR%20114F%20E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR 114F E6327, NPN Pre-Biased, 50 V Vce, 100 mA Ic, 160 MHz, 4.7 kOhms R1, 10 kOhms R2, SOT-723, Tape & Reel.","salesMarkdown":"## Pre-biased NPN in SOT-723 The Infineon BCR 114F E6327 is a pre-biased NPN transistor in a SOT-723 surface-mount package, integrating two bias resistors—a 4.7 kOhms base resistor (R1) and a 10 kOhms emitter-base resistor (R2)—to simplify driver and switching circuits. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it targets low-current switching and interface applications where external bias components would otherwise consume board area. The device is specified for a DC current gain (hFE) of 30 minimum at 5 mA, 5 V, and a transition frequency of 160 MHz, suitable for signal-level switching up to moderate speeds. ## Built-in resistors: what the values mean The 4.7 kOhms base resistor and 10 kOhms emitter-base resistor set a fixed bias point, so the transistor turns on with a predictable base current from a logic-level or MCU output—no external resistor network needed. The Vce saturation of 300 mV at 500 µA base drive and 10 mA collector current gives a low on-state voltage drop for a 100 mA rated part, keeping dissipation manageable in a 250 mW package. ## Obsolete — sourcing through independent distribution The BCR 114F carries an obsolete lifecycle status.","metaTitle":"BCR 114F E6327 NPN Pre-Biased Transistor, 50 V, 100 mA","metaDescription":"Infineon BCR 114F E6327 NPN pre-biased transistor in SOT-723. 50 V Vce, 100 mA Ic, 160 MHz ft.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SOT-723","Product Status":"Obsolete","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR 114","Resistor - Base (R1)":"4.7 kOhms","Frequency - Transition":"160 MHz","Supplier Device Package":"PG-TSFP-3","Resistor - Emitter Base (R2)":"10 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/52faa9dcad8acb9666481d4d78a153bb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the transistor type of BCR 114F E6327?","answer":"The BCR 114F E6327 is an NPN pre-biased transistor, meaning it includes two integrated bias resistors: a 4.7 kOhms base resistor and a 10 kOhms emitter-base resistor."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR-114F-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR-114F-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}