{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR 112F E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR-112F-E6327","canonicalUrl":"https://icboms.com/infineon/BCR-112F-E6327","factsUrl":"https://icboms.com/api/mcp/products/BCR%20112F%20E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR 112F E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, dual 4.7 kΩ bias resistors, 140 MHz transition frequency, SOT-723 package, 250 mW power dissipation.","salesMarkdown":"The BCR 112F E6327: NPN pre-biased transistor with dual 4.7 kΩ resistors (R1 and R2) integrated. Switches loads up to 100 mA at 50 V, transition frequency 140 MHz, SOT-723 package. ## Obsolete — sourcing reality The BCR 112F E6327 carries an Obsolete lifecycle status. Sourcing is limited to surplus inventory, broker channels, and independent distribution. ## Bias resistor ratio — the so-what Both R1 (base) and R2 (base-emitter) are 4.7 kΩ, giving a 1:1 ratio. This sets the input voltage threshold at roughly half the supply when driven from a GPIO, and the 4.7 kΩ base resistor limits base current without an external part. The 100 nA collector cutoff (ICBO) means leakage is negligible at room temperature, so the output stays off when the input is low. The 300 mV saturation at 500 µA base, 10 mA collector gives a low on-state voltage drop for small-signal switching.","metaTitle":"Infineon BCR 112F E6327 NPN Pre-Biased Transistor, SOT-723","metaDescription":"Infineon BCR 112F E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, dual 4.7 kΩ resistors, SOT-723 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SOT-723","Product Status":"Obsolete","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR 112","Resistor - Base (R1)":"4.7 kOhms","Frequency - Transition":"140 MHz","Supplier Device Package":"PG-TSFP-3","Resistor - Emitter Base (R2)":"4.7 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"20 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.1400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR 112F E6327 obsolete?","answer":"Yes, Infineon lists the BCR 112F E6327 as Obsolete. It is no longer in production, and no direct replacement order code is provided. Sourcing is through surplus and independent distribution channels."},{"question":"What are the specifications of BCR 112F E6327?","answer":"It is an NPN pre-biased transistor with 50 V VCEO, 100 mA collector current, dual 4.7 kΩ bias resistors, 140 MHz transition frequency, 250 mW power dissipation, and a 300 mV saturation voltage at 500 µA base / 10 mA collector. It comes in a SOT-723 surface-mount package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR-112F-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR-112F-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}