{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR 108L3 E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR-108L3-E6327","canonicalUrl":"https://icboms.com/infineon/BCR-108L3-E6327","factsUrl":"https://icboms.com/api/mcp/products/BCR%20108L3%20E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR 108 series NPN pre-biased transistor, SC-101 / SOT-883 package, 50 V VCEO, 100 mA Ic, 250 mW Pd, 170 MHz transition frequency, R1=2.2 kΩ, R2=47 kΩ.","salesMarkdown":"## What the pre-biased configuration saves you The Infineon BCR 108L3 E6327 is an NPN pre-biased transistor that integrates a 2.2 kOhms base resistor (R1) and a 47 kOhms emitter-base resistor (R2) into the die, eliminating two external passives from the BOM. This is a space-saving move for dense boards where every 0402 footprint counts — the SOT-883 package (SC-101) measures roughly 0.6 x 0.3 mm, so the whole switching circuit fits in the area a discrete resistor alone would occupy. ## When 100 mA and 250 mW define the load budget Collector current is rated 100 mA maximum, and total device power dissipation is capped at 250 mW. That puts this part squarely in the signal-switching and low-current driver lane — think GPIO level translation, relay or LED drive up to 100 mA, or inverter/buffer stages in portable gear. The 170 MHz transition frequency means it handles fast edges in digital interfaces without slowing the bus.","metaTitle":"Infineon BCR 108L3 E6327 NPN Pre-Biased Transistor, 170 MHz","metaDescription":"Infineon BCR 108L3 E6327 NPN pre-biased transistor with 2.2 kΩ base resistor, 47 kΩ emitter-base resistor. 100 mA Ic, 250 mW Pd, 170 MHz fT. SOT-883 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SC-101, SOT-883","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR 108","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"170 MHz","Supplier Device Package":"PG-TSLP-3-4","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/dae961ce63cf27eb4043ecfeefb001c2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BCR 108L3 E6327 obsolete or nearing end of life?","answer":"No. Infineon lists the product status as active."},{"question":"What is the maximum collector current and power dissipation of BCR 108L3?","answer":"Maximum collector current (Ic) is 100 mA, and maximum power dissipation is 250 mW. These ratings set the load-handling and thermal ceiling for the design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR-108L3-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR-108L3-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}