{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BCR 108F E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BCR-108F-E6327","canonicalUrl":"https://icboms.com/infineon/BCR-108F-E6327","factsUrl":"https://icboms.com/api/mcp/products/BCR%20108F%20E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BCR 108F E6327, NPN Pre-Biased, 50 V VCEO, 100 mA IC, 170 MHz fT, R1 2.2 kOhms, R2 47 kOhms, SOT-723, PG-TSFP-3, Surface Mount, 250 mW.","salesMarkdown":"## Obsolete — sourcing through independent distribution The Infineon BCR 108F E6327 is an NPN pre-biased digital transistor, officially listed as obsolete. It integrates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external biasing components in low-power switching circuits. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it suits relay drivers, LED drivers, and logic-level interface stages. The 170 MHz transition frequency keeps switching losses low in applications up to a few MHz. ## Package and footprint — SOT-723 Housed in a SOT-723 package (Infineon code PG-TSFP-3), the BCR 108F E6327 measures roughly 1.2 x 1.2 mm — a tiny three-lead surface-mount package. Hand-soldering is possible with a fine tip and steady hands, but a hot-air station or reflow profile is more reliable. The 250 mW power dissipation limit means the part is intended for low-power signal switching, not continuous high-current loads. ## Saturation and gain — what the numbers mean VCE(sat) is specified at 300 mV maximum with a base current of 500 µA and collector current of 10 mA — a typical drive condition for saturating the transistor in a switching application. The minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V VCE gives enough headroom for logic-level drive. Collector cutoff current is a low 100 nA, so leakage won't load down a high-impedance node in off state.","metaTitle":"Infineon BCR 108F E6327 NPN Pre-Biased Transistor, 50 V","metaDescription":"Infineon BCR 108F E6327 NPN pre-biased digital transistor, 50 V VCEO, 100 mA IC, 170 MHz fT, SOT-723.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tape & Reel (TR)","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"SOT-723","Product Status":"Obsolete","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Base Product Number":"BCR 108","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"170 MHz","Supplier Device Package":"PG-TSFP-3","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 10mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 5mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ca1544aaf2aafd2d035881c4e6e72774.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BCR-108F-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BCR-108F-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}