{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BC856BWE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BC856BWE6327","canonicalUrl":"https://icboms.com/infineon/BC856BWE6327","factsUrl":"https://icboms.com/api/mcp/products/BC856BWE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BC856BWE6327 PNP transistor, Automotive AEC-Q101, 65 V Vce, 100 mA Ic, 250 MHz fT, hFE 220 min, SC-70/SOT-323 package, surface mount, 330 mW.","salesMarkdown":"The Infineon BC856BWE6327 is a PNP bipolar junction transistor in a compact SC-70 (SOT-323) surface-mount package. It is rated for a collector-emitter breakdown voltage of 65 V and a continuous collector current of 100 mA, with a power dissipation of 330 mW. The device carries AEC-Q101 automotive qualification, meaning it is documented and tested for use in automotive electronics under IATF 16949 quality management — not just 'automotive-capable' but formally qualified with PPAP-ready data. Typical applications include switching and amplification in automotive body control modules, engine management, infotainment, and industrial control circuits where a small-signal PNP is needed in a space-constrained layout. ## Key specs that decide the fit The 65 V Vce breakdown gives comfortable margin on nominal 12 V and 24 V automotive rails, and handles load-dump transients up to 40 V as long as the avalanche energy stays within the single-pulse SOA. The 250 MHz transition frequency means this transistor can switch at several megahertz or amplify signals into the VHF range — useful for DC-DC converter gate drive buffers or RF pre-driver stages. hFE is specified at a minimum of 220 at 2 mA collector current and 5 V Vce, which provides consistent gain in analog current mirrors or level shifters; the gain holds well into the milliampere range, so the part is a good fit for low-power signal conditioning. Saturation voltage is 650 mV max at 5 mA base current and 100 mA collector current — a moderate Vce(sat) typical for small-signal PNP devices, acceptable for switching loads that do not require deep saturation. Collector cutoff current is specified at 15 nA maximum, which is tight enough for battery-powered wake-up circuits where leakage matters. ## Package and mounting The SC-70 (SOT-323) package has a 1.25 x 2.0 mm footprint with 0.65 mm pin pitch — small enough for dense multilayer boards but still hand-solderable with a fine tip. The supplier device package is PG-SOT323-3-1, which is Infineon's designation for the green-moulded version. Standard MSL 1 handling applies, so no bake required before reflow if the bag seal is intact. ## Lifecycle and sourcing posture This is a current-production part from Infineon, widely available through the distribution channel. For BOM lines requiring a qualified automotive-grade PNP in SC-70, this part is a low-risk, single-source item — no LTB risk, no forced redesign horizon.","metaTitle":"BC856BWE6327 PNP transistor, 65 V, 100 mA, 250 MHz, AEC-Q101","metaDescription":"Infineon BC856BWE6327 PNP transistor in SC-70 (SOT-323) package. 65 V Vce, 100 mA Ic, 250 MHz fT, hFE 220 min. AEC-Q101 automotive qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"Automotive, AEC-Q101","Package":"Bulk","Power - Max":"330 mW","Mounting Type":"Surface Mount","Package / Case":"SC-70, SOT-323","Product Status":"Active","Transistor Type":"PNP","lifecycle_stage":"eol_hot","Operating Temperature":"150°C(TJ)","Frequency - Transition":"250MHz","Supplier Device Package":"PG-SOT323-3-1","Vce Saturation (Max) @ Ib, Ic":"650mV @ 5mA, 100mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"15nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"220 @ 2mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"65 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/2edgsvizne/INFNS12319-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the BC856BWE6327 transistor?","answer":"The BC856BWE6327 is a PNP bipolar junction transistor from Infineon, rated for 65 V collector-emitter breakdown, 100 mA collector current, and 250 MHz transition frequency. It is housed in an SC-70 (SOT-323) surface-mount package and qualified to AEC-Q101 for automotive applications."},{"question":"What is the hFE of BC856BWE6327?","answer":"The DC current gain (hFE) is specified at a minimum of 220 when tested at 2 mA collector current and 5 V collector-emitter voltage."},{"question":"Is BC856BWE6327 automotive qualified?","answer":"Yes. It is part of Infineon's Automotive series and carries AEC-Q101 qualification, which means it is documented and tested to automotive reliability standards with PPAP data available."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BC856BWE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BC856BWE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}