{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BC80716E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BC80716E6327","canonicalUrl":"https://icboms.com/infineon/BC80716E6327","factsUrl":"https://icboms.com/api/mcp/products/BC80716E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BC80716E6327 PNP general-purpose transistor, 45 V Vceo, 500 mA Ic, 200 MHz fT, 330 mW Pd, SOT-23-3 package, active lifecycle.","salesMarkdown":"## PNP small-signal transistor for general-purpose switching and amplification The Infineon BC80716E6327 is a PNP bipolar junction transistor in the standard SOT-23-3 surface-mount package (PG-SOT23-3-11). It is rated for a collector-emitter breakdown voltage of 45 V and a continuous collector current of 500 mA, with a power dissipation ceiling of 330 mW. The 200 MHz transition frequency makes it suitable for moderate-speed switching and linear amplification up to low-VHF frequencies. Vce(sat) is specified at 700 mV maximum with a base current of 50 mA driving a collector current of 500 mA. That saturation voltage is the key loss term in a low-side switch: at full rated current the transistor drops about 0.7 V, so the power dissipated in saturation is roughly 350 mW — right at the package limit, meaning a switch running at 500 mA needs good PCB copper to keep the junction below 150 °C. DC current gain (hFE) is a minimum of 100 at 100 mA, 1 V, which gives plenty of base-drive margin for a microcontroller GPIO driving the base through a few kilo-ohms.","metaTitle":"BC80716E6327 PNP Transistor, 45 V, 500 mA, 200 MHz, SOT-23-3","metaDescription":"Infineon BC80716E6327 PNP bipolar transistor: 45 V Vceo, 500 mA Ic, 200 MHz fT, 330 mW Pd. SOT-23-3 package. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"330 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","Transistor Type":"PNP","lifecycle_stage":"eol_hot","Operating Temperature":"150°C(TJ)","Frequency - Transition":"200MHz","Supplier Device Package":"PG-SOT23-3-11","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector (Ic) (Max)":"500 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 100mA, 1V","Voltage - Collector Emitter Breakdown (Max)":"45 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0300","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c151a3db4e605dbccead12dd1bf9aa3d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to BC80716E6327?","answer":"The BC807-16 family includes several SOT-23-3 variants from Infineon and other manufacturers with the same 45 V, 500 mA rating and 100 to 250 hFE bin. The BC80716E6327 is the standard hFE-16 grade; a BC807-25 or BC807-40 would differ only in the gain range. All are pin-compatible in the SOT-23-3 footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BC80716E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BC80716E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}