{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BC807-25WE6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BC807-25WE6327","canonicalUrl":"https://icboms.com/infineon/BC807-25WE6327","factsUrl":"https://icboms.com/api/mcp/products/BC807-25WE6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon BC807-25WE6327 PNP bipolar transistor, 45 V Vce breakdown, 500 mA collector current, 250 mW power dissipation, SOT-23-3 surface-mount package, 200 MHz transition frequency.","salesMarkdown":"The Infineon BC807-25WE6327 is a general-purpose PNP bipolar transistor in the standard SOT-23-3 footprint. It is rated for 45 V collector-emitter breakdown and 500 mA continuous collector current, with a minimum DC current gain of 160 at 100 mA collector current and 1 V Vce. The 250 mW power dissipation limit and 150°C junction temperature rating suit it for low-to-moderate power switching and linear applications in industrial controls, power-supply housekeeping, and signal conditioning where a PNP pull-down or current sink is needed. ## Gain at the working point — 160 minimum hFE at 100 mA The hFE of 160 minimum at 100 mA and 1 V Vce means the transistor needs only about 0.6 mA base drive to saturate a 100 mA load, which is easy to source from a logic gate or a microcontroller output pin. At the full 500 mA the gain will drop, but the 700 mV Vce saturation at 50 mA base current and 500 mA collector current gives a reasonable on-state voltage for a PNP of this size. ## Package and footprint — SOT-23-3, field-swappable The BC807-25WE6327 comes in the industry-standard SOT-23-3 package (Infineon calls it PG-SOT23-3-11). No lab bench needed to swap it on site — a fine-tip iron and steady hands are enough. The bulk shipping form means it arrives loose in a bag; if your pick-and-place line expects tape, note the packaging difference. ## Lifecycle — active, no end-of-life concern Infineon lists the BC807-25WE6327 as an active product.","metaTitle":"BC807-25WE6327 PNP Transistor, 45 V, 500 mA, SOT-23-3","metaDescription":"Infineon BC807-25WE6327 PNP bipolar transistor, 45 V Vce, 500 mA Ic, hFE min 160 at 100 mA. SOT-23-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Bulk","Power - Max":"250 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","Transistor Type":"PNP","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"200MHz","Supplier Device Package":"PG-SOT23-3-11","Vce Saturation (Max) @ Ib, Ic":"700mV @ 50mA, 500mA","Current - Collector (Ic) (Max)":"500 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"160 @ 100mA, 1V","Voltage - Collector Emitter Breakdown (Max)":"45 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.0200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c151a3db4e605dbccead12dd1bf9aa3d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BC807-25WE6327/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BC807-25WE6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BC807-25WE6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}